CORC

在结果中检索

CORC

浏览/检索结果: 共17条，第1-10条 帮助

限定条件                
已选(0)清除 条数/页：   排序方式：
Spatial hole burning degradation of algaas/gaas laser diodes 期刊论文
Applied physics letters, 2011, 卷号: 99, 期号: 10, 页码: 3
作者:  Qiao, Y. B.;  Feng, S. W.;  Xiong, C.;  Wang, X. W.;  Ma, X. Y.
收藏  |  浏览/下载：35/0  |  提交时间：2019/05/12
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：55/10  |  提交时间：2011/07/05
Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546
Li ZW; Xu XQ; Wang J; Liu JM; Liu XL; Yang SY; Zhu QS; Wang ZG
收藏  |  浏览/下载：69/8  |  提交时间：2011/07/05
Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties 期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 22, 页码: 4668-4672
Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Qiu YX (Qiu Y. X.); Yang H (Yang H.)
收藏  |  浏览/下载：38/0  |  提交时间：2010/12/12
Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation 期刊论文
nanoscale research letters, 2009, 卷号: 4, 期号: 7, 页码: 753-757
作者:  Duan RF;  Wei TB
收藏  |  浏览/下载：98/0  |  提交时间：2010/03/08
Hillocks and hexagonal pits in a thick film grown by hvpe 期刊论文
Microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1556-1559
作者:  Wei, T. B.;  Duan, R. F.;  Wang, J. X.;  Li, J. M.;  Huo, Z. Q.
收藏  |  浏览/下载：13/0  |  提交时间：2019/05/12
Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
作者:  Yang H;  Zhao DG;  Zhu JJ;  Yang H;  Zhang SM
收藏  |  浏览/下载：182/43  |  提交时间：2010/03/08
Hillocks and hexagonal pits in a thick film grown by HVPE 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1556-1559
作者:  Duan RF;  Wei TB
收藏  |  浏览/下载：299/42  |  提交时间：2010/03/08
Characterization of free-standing gan substrate grown through hydride vapor phase epitaxy with a tin interlayer 期刊论文
Applied surface science, 2007, 卷号: 253, 期号: 18, 页码: 7423-7428
作者:  Wei, T. B.;  Duan, R. F.;  Wang, J. X.;  Li, J. M.;  Huo, Z. Q.
收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12

©版权所有 ©2017 CSpace - Powered by CSpace