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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Enhancement of field emission of the zno film by the reduced work function and the increased conductivity via hydrogen plasma treatment 期刊论文 Applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: 3 作者:  You, J. B.;  Zhang, X. W.;  Cai, P. F.;  Dong, J. J.;  Gao, Y. 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Atomic force microscopy  Field emission  Hydrogen  Ii-vi semiconductors  Plasma materials processing  Sputter deposition  Wide band gap semiconductors  Work function  Zinc compounds   Enhancement of conductivity and transmittance of zno films by post hydrogen plasma treatment 期刊论文 Journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: 6 作者:  Cai, P. F.;  You, J. B.;  Zhang, X. W.;  Dong, J. J.;  Yang, X. L. 收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12 Annealing  Carrier density  Carrier mobility  Diffusion  Electrical conductivity  Electrical resistivity  Hydrogen  Ii-vi semiconductors  Impurity states  Interstitials  Light transmission  Plasma materials processing  Semiconductor thin films  Sputter deposition  Vacancies (crystal)  Visible spectra  Wide band gap semiconductors  Zinc compounds   Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者:  Zhang XW;  You JB;  Yin ZG 收藏  |  浏览/下载：71/1  |  提交时间：2010/03/08 annealing  carrier density  carrier mobility  diffusion  electrical conductivity  electrical resistivity  hydrogen  II-VI semiconductors  impurity states  interstitials  light transmission  plasma materials processing  semiconductor thin films  sputter deposition  vacancies (crystal)  visible spectra  wide band gap semiconductors  zinc compounds   Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: art. no. 262105 作者:  Zhang XW;  Yin ZG;  You JB 收藏  |  浏览/下载：101/13  |  提交时间：2010/03/08 atomic force microscopy  field emission  hydrogen  II-VI semiconductors  plasma materials processing  sputter deposition  wide band gap semiconductors  work function  zinc compounds   Single-photon source in strong photon-atom interaction regime in quasiperiodic photonic crystals 期刊论文 epl, 2008, 卷号: 84, 期号: 6, 页码: art. no. 67003 Xu XS; Chen HD; Yamada T; Otomo A 收藏  |  浏览/下载：383/110  |  提交时间：2010/03/08 BAND-GAP MATERIALS  SPONTANEOUS EMISSION  QUANTUM-DOT  FLUORESCENCE   Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer 期刊论文 journal of crystal growth, 2001, 卷号: 231, 期号: 4, 页码: 520-524 Cao X; Zeng YP; Kong MY; Pan LA; Wang BQ; Zhu ZP; Wang XG; Chang Y; Chu JH 收藏  |  浏览/下载：136/8  |  提交时间：2010/08/12 molecular beam epitaxy  semiconducting III-V materials  high electron mobility transistors  ELECTRON-MOBILITY TRANSISTOR  CARRIER DENSITY  QUANTUM-WELLS  BAND-GAP