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科研机构
上海大学 [41]
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期刊论文 [40]
会议论文 [1]
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2019 [2]
2018 [6]
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Fully Printed Top-Gate Metal-Oxide Thin-Film Transistors Based on Scandium-Zirconium-Oxide Dielectric
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 445-450
作者:
Li, Yuzhi[1]
;
Lan, Linfeng[2]
;
Hu, Shiben[3]
;
Gao, Peixiong[4]
;
Dai, Xingqiang[5]
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/04/22
Inkjet printing
scandium zirconium oxide (Sc1Zr1Ox)
thin-film transistors (TFTs)
top gate
Enhanced Stability in Zr-Doped ZnO TFTs With Minor Influence on Mobility by Atomic Layer Deposition
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 1760-1765
作者:
Yang, Jun[1]
;
Zhang, Yongpeng[2]
;
Qin, Cunping[3]
;
Ding, Xingwei[4]
;
Zhang, Jianhua[5]
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/04/22
Atomic layer deposition (ALD)
oxygen defects
temperature stability
Zr-doped ZnO (ZrZnO) thin-film transistors (TFTs)
Enhanced Electrical Performance and Negative Bias Illumination Stability of Solution-Processed InZnO Thin-Film Transistor by Boron Addition
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 520-525
作者:
Zhong, De-Yao[1]
;
Li, Jun[2]
;
Zhao, Cheng-Yu[3]
;
Huang, Chuan-Xin[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
B doping concentration
boron-doped indium-zinc-oxide (BIZO) thin-film transistors (TFTs)
negative bias illumination stress (NBIS) stability
solution process
Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors With High-k ZrO2 Gate Insulator
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 526-532
作者:
Zhao, Cheng-Yu[1]
;
Li, Jun[2]
;
Zhong, De-Yao[3]
;
Huang, Chuan-Xin[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/04/24
ZrO2 gate insulator
lanthanum(La) indium oxide (LaInO) thin-film transistors (TFTs)
solution process
stability
Nitrogen-Doped ZnO Film Fabricated Via Rapid Low-Temperature Atomic Layer Deposition for High-Performance ZnON Transistors
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 3283-3290
作者:
Ding, Xingwei[1]
;
Yang, Jun[2]
;
Qin, Cunping[3]
;
Yang, Xuyong[4]
;
Ding, Tao[5]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/22
Atomic layer deposition
density of states (DOS)
oxygen defects
nitrogen-doped ZnO (ZnON) thin-film transistors (TFTs)
Inkjet Printed Electrodes in Thin Film Transistors
期刊论文
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 卷号: 6, 页码: 774-790
作者:
Tao, Ruiqiang[1]
;
Ning, Honglong[2]
;
Chen, Jianqiu[3]
;
Zou, Jianhua[4]
;
Fang, Zhiqiang[5]
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/04/22
Inkjet printing
thin film transistors
electrodes
low-temperature techniques
high performance
Aqueous Solution Induced High-Dielectric-Constant AlOx : Y Films for Thin-Film Transistor Applications
期刊论文
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 页码: 7566-7572
作者:
Wu, Weihua[1]
;
Javaid, Kashif[2]
;
Liang, Lingyan[3]
;
Yu, Jingjing[4]
;
Liang, Yu[5]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/22
Insulators
Stacked Structure
Spin-Coating
Thin Film Transistors
Metal Oxides
High-Gain Hybrid CMOS Inverters by Coupling Cosputtered ZnSiSnO and Solution-Processed Semiconducting SWCNT
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 2838-2843
作者:
Li, Jun[1]
;
Zhong, De-Yao[2]
;
Huang, Chuan-Xin[3]
;
Li, Xi-Feng[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/04/22
Inverter
solution process
stability
thin-film transistors (TFTs)
Feasibility of Atomic Layer Deposited AlZrOx Film to Achieve High Performance and Good Stability of ZnSnO-TFT
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 4959-4964
作者:
Li, Jun[1]
;
Huang, Chuan-Xin[2]
;
Zhao, Cheng-Yu[3]
;
Zhong, De-Yao[4]
;
Zhang, Jian-Hua[5]
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/04/24
AlZrOx insulator
atomic layer deposition
stability
thin-film transistors (TFTs)
Stability enhancement in InGaZnO thin-film transistor with a novel Al2O3/HfO2/Al2O3 as gate insulator
期刊论文
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2017, 卷号: 651, 页码: 235-242
作者:
Ding, Xingwei[1]
;
Qin, Cunping[2]
;
Xu, Tao[3]
;
Song, Jiantao[4]
;
Zhang, Jianhua[5]
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/04/24
a-IGZO
Al2O3/HfO2/Al2O3
density-of-states
thin film transistors
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