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Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 卷号: 272, 页码: 128-131
Chen, J; Luo, JX; Wu, QQ; Chai, Z; Huang, XL; Wei, X; Wang, X(重点实验室)
收藏  |  浏览/下载:15/0  |  提交时间:2013/05/10
Influence of Si nanocrystal embedded in BOX on radiation and electrical properties of SOI wafer 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 卷号: 272, 页码: 257-260
Bi, DW(重点实验室); Zhang, ZX(重点实验室); Chen, M; Wu, AM(重点实验室); Wei, X; Wang, X(重点实验室)
收藏  |  浏览/下载:11/0  |  提交时间:2013/05/10
Transportation of carriers in silicon implanted SiO2 films during ionizing radiation 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 卷号: 272, 页码: 266-270
Chen, M; Zhang, Z(重点实验室)X; Wei, X; Bi, DW(重点实验室); Zou, S(重点实验室)C; Wang, X(重点实验室)
收藏  |  浏览/下载:13/0  |  提交时间:2013/05/10
Analysis of bias effects on the total ionizing dose response in a 180 nm technology 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 卷号: 644, 期号: 1, 页码: 48-54
Liu, ZL; Hu, ZY; Zhang, Z(重点实验室)X; Shao, H; Chen, M; Bi, DW; Ning, BX; Zou, SC(重点实验室)
收藏  |  浏览/下载:17/0  |  提交时间:2013/05/10
Effect of annealing on structure and hardness of oxygen-implanted layer on Ti6Al4V by plasma-based ion implantation 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 卷号: 268, 期号: 2, 页码: 135-139
Jinlong, L; Mingren, S; Xinxin, M; Li, XM; Zhenlun, S
收藏  |  浏览/下载:20/0  |  提交时间:2012/03/24
Fabrication of Total-Dose-Radiation-Hardened (TDRH) SOI wafer with embedded silicon nanoclusters 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 卷号: 267, 期号: 41495, 页码: 1489-1491
Wu, AM; Wang, X(重点实验室); Wei, X; Chen, J; Chen, M; Zhang, ZX(重点实验室)
收藏  |  浏览/下载:9/0  |  提交时间:2013/05/10
Oxygen gettering in Si by He ion implantation-induced cavity layer 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2009, 卷号: 20, 期号: 4
Ou, X; Zhang, B(重点实验室); Wu, AM(重点实验室); Zhang, M(重点实验室); Wang, X(重点实验室)
收藏  |  浏览/下载:16/0  |  提交时间:2013/05/10


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