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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：长春光学精密机械与物理研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE) 会议论文 2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China Liang X.; Wang L.; Ning Y.; Liu Y. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method  self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode  the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1  2 and 3) in one period  QW depth  barrier width  the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis  we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device  the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications  Switzerland.   Influence of spatial temperature distribution on high accuracy interferometric metrology (EI CONFERENCE) 会议论文 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, April 26, 2010 - April 29, 2010, Dalian, China Gu Y.; Miao E.; Yan F.; Zhang J.; Yang H. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 We calculate the influence of temperature change on the refractive index of air  establish a model of air temperature distribution and analyze the effect of different temperature distribution on the high accuracy interferometric metrology. First  a revised Edlen formula is employed to acquire the relation between temperature and refractive index of air  followed by introducing the fixed temperature gradient distribution among the spatial grid within the optical cavity between the reference flat and the test flat of the Fizeau interferometer  accompanied by a temperature change random function within each grid. Finally  all the rays through the air layer with different incident angles are traced by Matlab program in order to obtain the final output position  angle and OPD for each ray. The influence of different temperature distribution and the length of the optical cavity in on the testing accuracy can be analyzed through the RMS value that results from repeatable rays tracing. As a result  the horizontal distribution (vertical to optical axis) has a large effect on the testing accuracy. Thus  to realize the high accuracy figure metrology  the horizontal distribution of temperature must be rigorously controlled as well as to shorten the length of the optical cavity to a large extent. The results from our simulation are of great significant for the accuracy analysis of interferometric testing and the research of manufacturing a interferometer. 2010 Copyright SPIE - The International Society for Optical Engineering.   High power vertical cavity surface-emitting laser with high reliability (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Changling Y.; Guoguang L.; Chunfeng H.; Li Q. 收藏  |  浏览/下载：12/0  |  提交时间：2013/03/25 High-power vertical-cavity surface-emitting lasers with InGaAs/GaAs quantum well active gain region are investigated. By using AlAs oxidation technology  the devices have been fabricated in experiment  and the characteristics of the device are carried out at room temperature. The 300m-diameter VCSELs have the maximum room temperature continuous wave (CW) optical output power of about 1.1W  and the threshold current of the device is about 0.46A. The life test of the device is carried out in constant current mode. The life test of 300-m diameter lasers shows that the average lifetime is about 1800h at 80C. The device degradation mechanism is also discussed in detail.   High power VCSEL device with periodic gain active region (EI CONFERENCE) 会议论文 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Ning Y. Q.; Qin L.; Sun Y. F.; Li T.; Cui J. J.; Peng B.; Liu G. Y.; Zhang Y.; Liu Y.; Wang L. J.; Cui D. F.; Xu Z. Y. 收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25 High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation  lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure  a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure  with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China He C.-F.; Lu G.-G.; Shan X.-N.; Sun Y.-F.; Li T.; Qin L.; Yan C.-L.; Ning Y.-Q.; Wang L.-J. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.