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基于STM32的人机接口设计与实现 期刊论文
长春工业大学学报(自然科学版), 2012, 期号: 06, 页码: 672-675
戴军建; 张传胜
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/11
基于FPGA的面阵CCD驱动及快速显示系统的设计实现 期刊论文
液晶与显示, 2012, 期号: 06, 页码: 789-794
张传胜
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/11
CCD  FPGA  TFT  
基于LPC2138的TFT触摸屏人机交互模块设计 会议论文
中国北京
王彪
收藏  |  浏览/下载：46/0  |  提交时间：2013/03/19
808nm high-power semiconductor laser therapeutic apparatus based on LPC2138 (EI CONFERENCE) 会议论文
2011 IEEE International conference on Intelligent Computation and Bio-Medical Instrumentation, ICBMI 2011, December 14, 2011 - December 17, 2011, Wuhan, Hubei, China
Wang B.
收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25
Fabrication of ZnO thin film transistors based on the substrate of glass (EI CONFERENCE) 会议论文
2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China
Yang X.; Wang C.; Zhao C.; Tang W.; Gao X.; Yang J.; Liu B.; Qi X.; Du G.; Cao J.
收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25
Micro-motion exposure method based on PZT piezoelectric ceramics (EI CONFERENCE) 会议论文
International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, June 17, 2009 - June 19, 2009, Beijing, China
Sun W.-J.; Zhang M.-H.; Meng Z.
收藏  |  浏览/下载：92/0  |  提交时间：2013/03/25
There mainly is laser digital photofinishing technique and digital photofinishing technique based on LCD consisting of TFT and LCOS in the digital photofinishing field at the present time. The former have a good many merit such as wide color gamut  high processing rate  large output size and high brightness  but his cost is very high  his maintain technique being comparatively complex  that result in difficult use for people. The utilization ratio of the latter is low because of lower resolution and lower aperture ratio for LCD  but the digital photofinishing based on LCD have lower cost and higher utilization ration  being suitable for people's current standard of living. Considering above mentioned problem  a micro-motion exposure method based on PZT piezoelectric ceramics used in digital image photofinishing is presented. The two-dimension micro-motion exposure system consisting of PZT piezoelectric ceramics  LCD panel  polarizing film and spring strip is designed. By means of PZT piezoelectric ceramics the LCD panel is removed about the one half of the pixel size of the LCD panel for four times from the original place  at the same time imaging system is exposed four times at the printing paper. The software is used to control the time synchronization  the exposure time and motion range of the LCD panel. The system has advantages such as shorter response time than 0.1seconds  lesser motion error than 0.01 microns  high stability and repeatability. Experimental results show that the proposed micro-motion exposure method improve the picture brightness and enlarge output size  at the meantime reducing the cost of the system. 2009 SPIE.  
电流型有源矩阵OLED像素驱动电路的研究 学位论文
长春光学精密机械与物理所: 中国科学院长春光学精密机械与物理所, 2008
作者:  王龙彦
收藏  |  浏览/下载：7/0  |  提交时间：2012/03/21
驱动有机电致发光二极管显示的薄膜晶体管研究 学位论文
长春光学精密机械与物理所: 中国科学院长春光学精密机械与物理所, 2007
作者:  廖燕平
收藏  |  浏览/下载：7/0  |  提交时间：2012/03/21
The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G.
收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25
The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.  
Study of the fabrication of ZnO-TFT (EI CONFERENCE) 会议论文
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
Wang C.; Yang X. T.; Zhu H. C.; Ma X. M.; Fu G. Z.; Jing H.; Chang Y. C.; Du G. T.
收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25

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