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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 专题：北京航空航天大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Asymmetric hot-carrier thermalization and broadband photoresponse in graphene-2D semiconductor lateral heterojunctions 期刊论文 SCIENCE ADVANCES, 2019, 卷号: 5 作者:  Lin, Yuxuan;  Ma, Qiong;  Shen, Pin-Chun;  Ilyas, Batyr;  Bie, Yaqing 收藏  |  浏览/下载：23/0  |  提交时间：2019/12/30 Electron transport properties  Heterojunctions  Hot carriers  Layered semiconductors  Molybdenum compounds  Monolayers  Sulfur compounds  Electrostatic gates  Heterogeneous interfaces  Infrared photodetector  Light-matter interactions  Low-dimensional systems  Optoelectronic applications  Photo-thermoelectric  Proof of concept  Graphene   Solution Adsorption Formation of a pi-Conjugated Polymer/Graphene Composite for High-Performance Field-Effect Transistors 期刊论文 ADVANCED MATERIALS, 2018, 卷号: 30 作者:  Liu, Yun;  Hao, Wei;  Yao, Huiying;  Li, Shuzhou;  Wu, Yuchen 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/30 pi-pi interaction  field-effect transistors  graphene  organic semiconductors  solution adsorption   Low-temperature treatment for preservation and separation of graphene dispersions 期刊论文 JOURNAL OF MATERIALS SCIENCE, 2018, 卷号: 53, 页码: 13875-13885 作者:  Liu, L.;  Shen, Z.;  Zhang, X.;  Ma, S. 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/30 Boron nitride  Costs  Dispersions  Ethylene  Layered semiconductors  Liquids  Molybdenum compounds  Nanosheets  Screen printing  Separation  Solvents  Temperature  Van der Waals forces  Graphene dispersions  High surface energy  Industrial production  Long-term preservation  Low temperature treatment  Low-temperature storage  Physicochemical parameters  Screen printing technique  Graphene   Interface Engineering of Ge-based Nanoelectronics Using Fluorinated Graphene 会议论文 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings 作者:  Zheng, X.;  Zhang, M.;  Shi, X.;  Wang, G.;  Zheng, L. 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/30 Capacitance  Diffusion barriers  Germanium  Germanium oxides  Graphene  High-k dielectric  Manufacture  Metals  MOS devices  Nanoelectronics  Oxide semiconductors  Dielectric layer  Diffusion barrier layers  Equivalent oxide thickness  Interface engineering  Interfacial oxides  Low-power logic  Metal oxide semiconductor  Voltage hysteresis  Graphene devices   Mechanical and electronic properties of lateral graphene and hexagonal boron nitride heterostructures 期刊论文 CARBON, 2018, 卷号: 136, 页码: 286-291 作者:  Ge, Mei;  Si, Chen 收藏  |  浏览/下载：27/0  |  提交时间：2019/12/30 Density functional theory  Electronic properties  Energy gap  Heterojunctions  III-V semiconductors  Tensile strain  Tensile strength  Electronic behaviors  Hexagonal boron nitride  Interface effect  Mechanical and electronic properties  Misorientation angle  Non-monotonic variation  Uniaxial tensile strain  Graphene