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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Neural network based adaptive region tracking control for a swarm of ships in constrained space 会议论文 Proceedings - 2018 10th International Conference on Advanced Computational Intelligence, ICACI 2018 作者:  Sun, X.;  Ge, S.S.;  Xu, Q. 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/30 Backstepping  Collision avoidance  Computation theory  Controllers  Convergence of numerical methods  Decentralized control  Intelligent agents  Multi agent systems  Neural networks  Ships  Avoiding obstacle  Barrier potential  Constrained space  Decentralized controller  Dynamic interaction system  Function approximation techniques  Lyapunov stability analysis  Potential function  Adaptive control systems   Potential Barrier Height Depedence on Biased Voltages of Static Induction Thyristors 会议论文 2012 IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia, IPEMC 2012, Harbin, China, June 2, 2012 - June 5, 2012 作者:  Jianhong Yang;  Xiaoyan Sheng;  Ying Wei;  Xueyuan Cai;  Feihu Zhao 收藏  |  浏览/下载：2/0  |  提交时间：2015/09/25 Nuclear physics  Motion control  Power electronics  Thyristors  Anode currents  Biased voltage  Cathode currents  High frequency circuits  Numerical simulators  Potential barrier height  SITh  Static induction thyristors  Static inductions  Switching characteristics  Working frequency   Experimental study on the mechanism of BaTiO/sub 3/-based PTC-CO gas sensor 会议论文 Sensors and Actuators B (Chemical), Ninth International Meeting on Chemical Sensors. IMCS-9, Boston, MA, USA, INSPEC Zilong Tang; Zhigang Zhou; Zhongtai Zhang 收藏  |  浏览/下载：2/0 Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 In this paper  Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT)  Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers  respectively. In PL spectra  two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature  and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases  the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm  only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China He C.-F.; Lu G.-G.; Shan X.-N.; Sun Y.-F.; Li T.; Qin L.; Yan C.-L.; Ning Y.-Q.; Wang L.-J. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.   Electroluminescence from alumina ceramics surface under low AC electric field in vacuum 会议论文 作者:  Zhang, G. J.;  Yan, Z.;  Liu, Y. S.;  Okada, M.;  Yasuoka, K. 收藏  |  浏览/下载：3/0  |  提交时间：2020/01/07 electroluminescence  metal-alumina interface  potential barrier  surface state  charge injection