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Mutual passivation of donors and isovalent nitrogen in GaAs 期刊论文
physical review letters, 2006, 卷号: 96, 期号: 3, 页码: art.no.035505
Li J; Carrier P; Wei SH; Li SS; Xia JB
收藏  |  浏览/下载:72/0  |  提交时间:2010/04/11
Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文
17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005
Zhao, YW; Dong, ZY
收藏  |  浏览/下载:221/68  |  提交时间:2010/03/29
Binding energy of positively and negatively charged excitons in GaAs/AlxGa1-xAs quantum wells 期刊论文
chinese physics letters, 2002, 卷号: 19, 期号: 1, 页码: 114-116
Liu JJ; Zhang SF; Yang GC; Li SS
收藏  |  浏览/下载:80/5  |  提交时间:2010/08/12
Variational calculations of ionized-donor-bound excitons in GaAs-AlxGa1-xAs quantum wells 期刊论文
european physical journal b, 2001, 卷号: 19, 期号: 1, 页码: 17-20
Liu JJ; Zhang SF; Li YX; Kong XJ
收藏  |  浏览/下载:43/0  |  提交时间:2010/08/12
Binding energy of ionized-donor-bound excitons in the GaAs-AlxGa1-xAs quantum wells 期刊论文
chinese physics letters, 2000, 卷号: 17, 期号: 5, 页码: 358-359
Liu JJ; Zhang SF; Kong XJ; Li SS
收藏  |  浏览/下载:36/0  |  提交时间:2010/08/12
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate 期刊论文
compound semiconductors 1997, 1998, 卷号: 156, 期号: 0, 页码: 211-214
作者:  Jiang DS
收藏  |  浏览/下载:32/0  |  提交时间:2010/08/12
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate 会议论文
24th ieee international symposium on compound semiconductors, san diego, california, sep 08-11, 1997
作者:  Jiang DS
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/15


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