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CORC

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Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model 期刊论文
semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095002
Wang Y (Wang Y.); Chen NF (Chen N. F.); Zhang XW (Zhang X. W.); Huang TM (Huang T. M.); Yin ZG (Yin Z. G.); Bai YM (Bai Y. M.)
收藏  |  浏览/下载：171/19  |  提交时间：2010/09/20
Blue-shift photoluminescence from porous InAlAs 期刊论文
semiconductor science and technology, 2010, 卷号: 25, 期号: 11, 页码: art. no. 115006
Jiang YC (Jiang Y. C.); Liu FQ (Liu F. Q.); Wang LJ (Wang L. J.); Yin W (Yin W.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：53/0  |  提交时间：2010/12/28
High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001) 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 12, 页码: art.no.123104
作者:  
收藏  |  浏览/下载：78/0  |  提交时间：2010/04/11
Spectral dependence of spin photocurrent and current-induced spin polarization in an InGaAs/InAlAs two-dimensional electron gas 期刊论文
physical review letters, 2006, 卷号: 96, 期号: 18, 页码: art.no.186605
Yang CL; He HT; Ding L; Cui LJ; Zeng YP; Wang JN; Ge WK
收藏  |  浏览/下载：62/0  |  提交时间：2010/04/11
Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 6, 页码: art.no.063114
作者:  
收藏  |  浏览/下载：55/0  |  提交时间：2010/04/11
Origin of deep level defect related photoluminescence in annealed InP 期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 12, 页码: art.no.123519
Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Miao, SS (Miao, Shanshan); Deng, AH (Deng, Aihong); Yang, J (Yang, Jun); Wang, B (Wang, Bo)
收藏  |  浏览/下载：59/0  |  提交时间：2010/03/29
Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文
12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006
Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Dong, HW (Dong, Hongwei); Sun, NF (Sun, Niefeng); Sun, TN (Sun, Tongnian)
收藏  |  浏览/下载：63/12  |  提交时间：2010/03/29
Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77
Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX
收藏  |  浏览/下载：38/0  |  提交时间：2010/04/11
Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338
作者:  
收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11
Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.)
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11

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