CORC

在结果中检索

CORC

浏览/检索结果: 共14条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005
Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang
收藏  |  浏览/下载：23/0  |  提交时间：2012/06/14
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan)
收藏  |  浏览/下载：42/0  |  提交时间：2010/12/28
Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Liu, Z; Wang, JX; Wang, XL; Hu, GX; Guo, LC; Liu, HX; Li, JP; Li, JM; Zeng, YP
收藏  |  浏览/下载：224/40  |  提交时间：2010/03/29
Study on surface morphology of GaN growth by MOCVD on GaN/Si(111) template 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 40495
Liu Z; Wang JX; Wang XL; Hu GX; Guo LC; Liu HX; Li JP; Li JM; Zeng YP
收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11
In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 126-130
作者:  Xu B
收藏  |  浏览/下载：57/0  |  提交时间：2010/08/12
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
作者:  Zhang SM
收藏  |  浏览/下载：293/3  |  提交时间：2010/08/12
Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping 期刊论文
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
作者:  Zhang SM
收藏  |  浏览/下载：94/4  |  提交时间：2010/08/12
Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 4, 页码: 518-522
作者:  Xu B
收藏  |  浏览/下载：105/8  |  提交时间：2010/08/12
Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors 期刊论文
defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 147-152
Wu J; Lin F
收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12
High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE) 期刊论文
journal of crystal growth, 1999, 卷号: 200, 期号: 3-4, 页码: 613-616
Liu JP; Huang DD; Li JP; Sun DZ; Kong MY
收藏  |  浏览/下载：28/0  |  提交时间：2010/08/12

©版权所有 ©2017 CSpace - Powered by CSpace