QQ客服 官方微博 反馈留言

浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |  浏览/下载：53/10  |  提交时间：2011/07/05 UNDOPED GALLIUM ANTIMONIDE  SELF-DIFFUSION  NATIVE DEFECTS  N-TYPE  CRYSTALS  CATHODOLUMINESCENCE  PHOTOLUMINESCENCE  SEMICONDUCTORS  SPECTROSCOPY  LUMINESCENCE   Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE 期刊论文 journal of crystal growth, 2000, 卷号: 218, 期号: 1, 页码: 1-6 Xu HZ; Wang ZG; Kawabe M; Harrison I; Ansell BJ; Foxon CT 收藏  |  浏览/下载：60/0  |  提交时间：2010/08/12 GaN  photoluminescence  optical quenching of photoconductivity  native defect level  molecular beam epitaxy  SINGLE-CRYSTAL GAN  I-N PHOTODIODES  HIGH-SPEED  PHOTOCONDUCTORS  ALXGA1-XN  SIMULATIONS  DETECTORS  SAPPHIRE  LAYERS   Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy 期刊论文 journal of crystal growth, 2000, 卷号: 217, 期号: 3, 页码: 228-232 Xu HZ; Wang ZG; Harrison I; Bell A; Ansell BJ; Winser AJ; Cheng TS; Foxon CT; Kawabe M 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 GaN  photoluminescence  optical quenching of photoconductivity  native defect level  molecular beam epitaxy  N-TYPE GAN  DEEP-LEVEL DEFECTS  YELLOW LUMINESCENCE  MAGNETIC-RESONANCE  THIN-FILMS   Point defects in III-V compound semiconductors 期刊论文 defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93 Chen N 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 compound semiconductors  point defects  deep level centres  stoichiometry  MOLECULAR-BEAM EPITAXY  GAAS SINGLE-CRYSTALS  SEMIINSULATING GALLIUM-ARSENIDE  SEMI-INSULATING GAAS  ELECTRICAL-PROPERTIES  LATTICE-PARAMETER  NATIVE DEFECTS  CARBON  DIFFRACTOMETER  STOICHIOMETRY