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| Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
  收藏 | 浏览/下载：66/4 | 提交时间：2011/07/05
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| Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏 | 浏览/下载：55/10 | 提交时间：2011/07/05
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| Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546
Li ZW; Xu XQ; Wang J; Liu JM; Liu XL; Yang SY; Zhu QS; Wang ZG
收藏 | 浏览/下载：69/8 | 提交时间：2011/07/05
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| Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
作者: Yang H; Zhao DG ; Zhu JJ; Yang H; Zhang SM
收藏 | 浏览/下载：182/43 | 提交时间：2010/03/08
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| Hillocks and hexagonal pits in a thick film grown by HVPE 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1556-1559
作者: Duan RF; Wei TB
收藏 | 浏览/下载：299/42 | 提交时间：2010/03/08
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| Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping 期刊论文
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
作者: Zhang SM
收藏 | 浏览/下载：94/4 | 提交时间：2010/08/12
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| Influence of precipitates on GaN epilayer quality 期刊论文
materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 75, 期号: 2-3, 页码: 214-217
Kang JY; Huang QS; Wang ZG
收藏 | 浏览/下载：48/0 | 提交时间：2010/08/12
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| Influence of precipitates on GaN epilayer quality 会议论文
iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999
Kang JY; Huang QS; Wang ZG
收藏 | 浏览/下载：11/0 | 提交时间：2010/11/15
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| Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy 期刊论文
journal of crystal growth, 1998, 卷号: 183, 期号: 1-2, 页码: 31-37
Li XB; Sun DZ; Kong MY; Yoon SF
收藏 | 浏览/下载：35/0 | 提交时间：2010/08/12
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