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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2021     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory 期刊论文 ADVANCED ELECTRONIC MATERIALS, 2021, 页码: 10 作者:  Huang, Biaohong;  Xie, Zhongshuai;  Feng, Dingshuai;  Li, Lingli;  Li, Xiaoqi 收藏  |  浏览/下载：17/0  |  提交时间：2022/07/01 BiFeO3  current jump  domain wall creep  ferroelectric resistive switching  oxygen vacancy  space-charge-limited current   Enhanced Spin-Orbit Torque and Low Critical Current Density in Pt100-xRux[CoNi]/Ru Multilayer for Spintronic Devices 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 13, 期号: 51, 页码: 61742-61750 作者:  Ju, Hongzhan;  Zhao, Xiaotian;  Liu, Wei;  Song, Yuhang;  Liu, Long 收藏  |  浏览/下载：17/0  |  提交时间：2022/07/01 alloyed heavy metal  spin-orbit torque  current-induced magnetization switching  domain wall movements  spin Hall effect   Enhanced Spin-Orbit Torque and Low Critical Current Density in aPt(100-X)Ru(X)/[CoNi]/Ru Multilayer for Spintronic Devices 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2021, 页码: 9 作者:  Ju, Hongzhan;  Zhao, Xiaotian;  Liu, Wei;  Song, Yuhang;  Liu, Long 收藏  |  浏览/下载：41/0  |  提交时间：2022/01/27 alloyed heavy metal  spin-orbit torque  current-induced magnetization switching  domain wall movements  spin Hall effect   Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire 期刊论文 ADVANCED ELECTRONIC MATERIALS, 2021, 卷号: 7, 期号: 5, 页码: - 作者:  Shih, Yu-Chuan;  Lee, Ling;  Liang, Kai-De;  Manikandan, Arumugam;  Liu, Wen-Wu 收藏  |  浏览/下载：7/0  |  提交时间：2021/03/12 Copper  Copper oxides  Nanocrystalline materials  Nanowires  Oxide minerals  RRAM  Single crystals  Fabrication process  High current densities  Random access memory  Resistive switching  Resistive switching memory  Switching behaviors  Switching mechanism  Switching properties