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期刊论文 [19]
发表日期
2019 [19]
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发表日期:2019
内容类型:期刊论文
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Electroresistance of Pt/BaTiO3/LaNiO3 ferroelectric tunnel junctions and its dependence on BaTiO3 thickness
期刊论文
MATERIALS RESEARCH EXPRESS, 2019, 卷号: 6
作者:
Wang, Xi
;
Wu, Ming
;
Wei, Fansen
;
Zhang, Yiteng
;
Zheng, Chunyan
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/11/19
ferroelectric memory
pulsed laser deposition
ferroelectric tunnel junctions
resistive switching
Sub-nanosecond pulse programming and device design strategy for analog resistive switching in HfOx-based resistive random access memory
期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 114
作者:
Hang, Cheng-Zhou
;
Wang, Chen
;
Gao, Bin
;
Chen, Huan
;
Xu, Ming-Hong
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/12/02
Electric breakdown
Energy utilization
Hafnium compounds
Integrated circuit design
Intelligent systems
Monte Carlo methods
RRAM, Kinetic monte carlo simulation
Microscopic distribution
Neuromorphic computing
Resistive random access memory
Resistive random access memory (rram)
Resistive switching
Sub-nanosecond pulse
Thermal conductance, Switching
Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by TaO/TaO Bi-Layer Structure.
期刊论文
Nanoscale research letters, 2019, 卷号: Vol.14 No.1, 页码: 111
作者:
Danian Dong
;
Xiulong Wu
;
Tiancheng Gong
;
Ming Liu
;
Hangbing Lv
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2019/04/24
Bi-layer structure
CMOS-compatible process
Conductive bridge resistive switching memory
Reliability
Light-controlled resistive switching and voltage-controlled photoresponse characteristics in the Pt/CeO2/Nb:SrTiO3 heterostructure
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778
作者:
Xie, Shuai
;
Pei, Ling
;
Li, Meiya
;
Zhu, Yongdan
;
Cheng, Xiangyang
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2019/12/05
Pt/CeO2/Nb
SrTiO3 heterostructure
Light-controlled resistive switching
Voltage-controlled photoresponse
Schottky barrier
Electrons trapping/detrapping
Multilevel memory
High-Performance InGaZnO-Based ReRAMs
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 6, 页码: 2600-2605
作者:
Ma, Pengfei
;
Liang, Guangda
;
Wang, Yiming
;
Li, Yunpeng
;
Xin, Qian
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  |  
浏览/下载:39/0
  |  
提交时间:2019/12/11
Electrode
indium-gallium-zinc oxide (IGZO)
memory window
oxygen
plasma
resistive random access memories (ReRAMs)
retention time
Solution-Processed Physically Transient Resistive Memory Based on Magnesium Oxide
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: Vol.40 No.2, 页码: 193-195
作者:
Song, Fang
;
Wang, Hong
;
Sun, Jing
;
Dang, Bingjie
;
Gao, Haixia
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/17
Transient electronics
flexible
resistive switching memory
solution process
magnesium oxide (MgO)
Impact of chemical doping on resistive switching behavior in Zirconium-doped CHNHPbI based RRAM
期刊论文
Organic Electronics, 2019
作者:
Yuli He
;
Guokun Ma
;
Xiaowen Zhou
;
Hengmei Cai
;
Chunlei Liu
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/17
resistive random-access memory
CH3NH3PbI3 perovskite
Zirconium doping
space-charge limited conduction
Schottky emission
Recent Advances of Quantum Conductance in Memristors
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 9
作者:
Xue, Wuhong
;
Gao, Shuang
;
Shang, Jie
;
Yi, Xiaohui
;
Liu, Gang
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2019/12/18
QUANTIZED CONDUCTANCE
METALLIC NANOWIRES
RESISTIVE MEMORY
DEVICES
NANOFILAMENTS
MECHANISMS
NUCLEATION
PLASTICITY
TRANSPORT
FILAMENTS
Memristive Synapses for Brain-Inspired Computing
期刊论文
ADVANCED MATERIALS TECHNOLOGIES, 2019, 卷号: 4, 期号: 3
作者:
Wang, Jingrui
;
Zhuge, Fei
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2019/12/18
RESISTIVE-SWITCHING MEMORY
MAGNETIC TUNNEL-JUNCTIONS
LONG-TERM POTENTIATION
PHASE-CHANGE MEMORY
RRAM DEVICES
SYNAPTIC PLASTICITY
CONDUCTANCE LINEARITY
ELECTRONIC SYNAPSES
IMPLEMENTATION
SYSTEM
Redox gated polymer memristive processing memory unit
期刊论文
NATURE COMMUNICATIONS, 2019, 卷号: 10
作者:
Zhang, Bin
;
Fan, Fei
;
Xue, Wuhong
;
Liu, Gang
;
Fu, Yubin
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2019/12/18
NONVOLATILE RESISTIVE MEMORY
TERMINATED HYPERBRANCHED POLYIMIDE
FERROCENE DERIVATIVES
RECENT PROGRESS
DEVICE
TRIPHENYLAMINE
FUTURE
STATE
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