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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2017     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effects of Channel Layer Thickness on Characteristics of Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017 Han, Dedong; Huang, Lingling; Yu, Wen; Cong, Yingying; Dong, Junchen; Zhang, Xing; Wang, Yi 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 Channel layer thickness  flexible  nickel-doped zinc oxide (NZO)  thin-film transistor (TFT)   AZO Thin Film Transistor Performance Enhancement by Capping an Aluminum Layer 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017 Yu, Wen; Han, Dedong; Dong, Junchen; Cong, Yingying; Cui, Guodong; Wang, Yi; Zhang, Shengdong 收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03 Aluminum-zinc-oxide  capping layer (CL)  coplanar  crystallization  thin film transistor (TFT)  FIELD-EFFECT MOBILITY  ZINC-OXIDE  VOLTAGE  TFTS   High-Performance Ti-Doped Zinc Oxide TFTs With Double-Layer Gate Dielectric Fabricated at Low Temperature 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2017 Cui, Guodong; Han, Dedong; Cong, Yingying; Dong, Junchen; Yu, Wen; Zhang, Shengdong; Zhang, Xing; Wang, Yi 收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03 High performance  Ti-Zn-O (TiZO)  thin film transistor (TFT)  double-layer gate dielectric  THIN-FILM TRANSISTORS   Solution-Processed Organic Thin-Film Transistor Arrays with the Assistance of Laser Ablation 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2017, 卷号: 9, 页码: 3849-3856 作者:  Yang, Huihuang;  Chen, Cihai;  Zhang, Guocheng;  Lan, Shuqiong;  Chen, Huipeng 收藏  |  浏览/下载：5/0  |  提交时间：2019/11/21 solution processed  TFT arrays  laser ablation  organic thin-film transistor  display and circuits   Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 9, 页码: 3654-3660 作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/27 Analytical model  drain current  temperature characteristics  thin-film transistor (TFT)  trap states   Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 期刊论文 IEEE Transactions on Electron Devices, 2017, 卷号: 64, 期号: 9, 页码: 3654-3660 作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/27 Analytical model  drain current  temperature characteristics  thin-film transistor (TFT)  trap states