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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2016     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A Back-Channel-Etched Amorphous InGaZnO Thin-Film Transistor Technology With Al-Doped ZnO as Source/Drain and Pixel Electrodes 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Deng, Wei; Xiao, Xiang; Shao, Yang; Song, Zhen; Lee, Chia-Yu; Lien, Alan; Zhang, Shengdong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Aluminum-doped ZnO (AZO)  amorphous indium-gallium-zinc oxide (a-IGZO)  back-channel-etch (BCE)  pixel electrode (PE)  thin-film transistor (TFT)  wet etch  THRESHOLD VOLTAGE  PERFORMANCE  DAMAGE  LAYER  TFTS  SIO2   High-Performance Al-Sn-Zn-O Thin-Film Transistor With a Quasi-Double-Channel Structure 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2016 Cong, Yingying; Han, Dedong; Zhou, Xiaoliang; Huang, Lingling; Shi, Pan; Yu, Wen; Zhang, Yi; Zhang, Shengdong; Zhang, Xing; Wang, Yi 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 High-performance  Al-Sn-Zn-O (ATZO)  thin-film transistor (TFT)  quasi-double-channel (QDC) structure  MOBILITY  DESIGN   One Gate Diode-Connected Dual-Gate a-IGZO TFT Driven Pixel Circuit for Active Matrix Organic Light-Emitting Diode Displays 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Wang, Cuicui; Hu, Zhijin; He, Xin; Liao, Congwei; Zhang, Shengdong 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/04 Active-matrix organic light-emitting diode (AMOLED)  compensated pixel circuit  diode-connected structure  dual-gate (DG) amorphous indium-gallium-zinc-oxide thin-film transistor (a-IGZO TFT)  ELECTRICAL INSTABILITY  AMOLED DISPLAYS  VOLTAGE  BIAS  SI   High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Han, Dedong; Chen, Zhuofa; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/04 Flexible  high performance  tin-zinc-oxide (TZO)  thin film transistor (TFT)  A-IGZO TFTS  GLASS SUBSTRATE  MOBILITY   Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States 期刊论文 IEEE Transactions on Electron Devices, 2016, 卷号: 63, 期号: 11, 页码: 4423-4431 作者:  He, Hongyu*;  Liu, Yuan;  Yan, Binghui;  Lin, Xinnan;  Zheng, Xueren 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/27 Compact model  temperature characteristics  thin-film transistor (TFT)  trap states