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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2016     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 化学机械抛光设备负载特性与主体结构变形 期刊论文 2016, 2016 赵德文; 路新春; 何永勇; 王同庆; ZHAO Dewen; LU Xinchun; HE Yongyong; WANG Tongqing 收藏  |  浏览/下载：5/0 300mm晶圆化学机械抛光机关键技术研究与实现 期刊论文 2016, 2016 王同庆; 路新春; 赵德文; 门延武; 何永勇; WANG Tongqing; LU Xinchun; ZHAO Dewen; MEN Yanwu; HE Yongyong 收藏  |  浏览/下载：7/0 Role of crystal orientation on chemical mechanical polishing of single crystal copper 期刊论文 APPLIED SURFACE SCIENCE, 2016, 卷号: 386, 期号: [db:dc_citation_issue], 页码: 262-268 作者:  Zhu, Aibin;  He, Dayong;  Luo, Wencheng;  Liu, Yangyang 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/02 Chemical mechanical polishing  Crystal orientation  Single crystal copper  Quasi-continuum method   Fine-pitch through-silicon via integration with self-aligned back-side benzocyclobutene passivation layer 期刊论文 MICRO & NANO LETTERS, 2016 Guan, Yong; Ma, Shenglin; Zeng, Qinghua; Chen, Jing; Jin, Yufeng 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 three-dimensional integrated circuits  passivation  organic compounds  sputter etching  chemical mechanical polishing  radiography  optical microscopy  scanning electron microscopy  vector network analyser  four probe electrical measurement  scanning electron microscopy  optical microscopy  X-ray radiographic testing  repeatability  chemical mechanical polishing  plasma etching  back side benzocyclobutene passivation layer  self aligned benzocyclobutene passivation layer  fine pitch thr   Preparation of Mg-Doped Colloidal Silica Abrasives and Their Chemical Mechanical Polishing Performances on Sapphire 期刊论文 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 页码: 9951-9957 作者:  Ma, Pan[1];  Lei, Hong[2];  Chen, Ruling[3] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/26 Chemical Mechanical Polishing (CMP)  Sapphire  Mg-Doped Colloidal Silica Abrasives  Material Removal Rate   Process parameters optimisation for Si3N4 in chemical-mechanical polishing via Taguchi technique 期刊论文 International Journal of Nanomanufacturing, 2016, 卷号: Vol.12 No.2, 页码: 143-153 作者:  Wan, Lin-Lin;  Deng, Zhao-Hui;  Wang, Chao-Deng;  Liu, Wei;  Liu, Zhi-Jian 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/31 chemical-mechanical polishing  CMP  rotary curved surfaces  parameter optimisation  Taguchi methods  silicon nitride  Si3N4  process parameters  robust design  signal to noise ratio  SNR  analysis of variance  ANOVA  slurry concentration  slurry flow rate  polishing wheel speed  surface roughness  surface quality.