QQ客服 官方微博 反馈留言

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2016    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High-performance perovskite memristor based on methyl ammonium lead halides 期刊论文 JOURNAL OF MATERIALS CHEMISTRY C, 2016 Yan, Kai; Peng, Ming; Yu, Xiao; Cai, Xin; Chen, Si; Hu, Hsienwei; Chen, Buxin; Gao, Xue; Dong, Bin; Zou, Dechun 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 RESISTIVE SWITCHING BEHAVIOR  MEMORY DEVICES  SOLAR-CELLS  THIN-FILMS  HYSTERESIS   A flexible organic resistance memory device for wearable biomedical applications 期刊论文 NANOTECHNOLOGY, 2016 Cai, Yimao; Tan, Jing; Liu YeFan; Lin, Min; Huang, Ru 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 wearable biomedical devices  flexible  organic  resistive random access memory  nanotechnology  RANDOM-ACCESS MEMORY  NONVOLATILE MEMORY  RRAM  ARRAY   Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation 期刊论文 SCIENTIFIC REPORTS, 2016 Yu, Muxi; Cai, Yimao; Wang, Zongwei; Fang, Yichen; Liu, Yefan; Yu, Zhizhen; Pan, Yue; Zhang, Zhenxing; Tan, Jing; Yang, Xue; Li, Ming; Huang, Ru 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 NONVOLATILE MEMORY TECHNOLOGIES  THERMAL-OXIDATION  RESISTIVE MEMORY  EDGE ELECTRODES  THIN-FILMS  RESISTANCE  DEVICE  BEHAVIORS  FILAMENT  OXYGEN   Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array 期刊论文 NANOTECHNOLOGY, 2016 Chen, Zhe; Li, Haitong; Chen, Hong-Yu; Chen, Bing; Liu, Rui; Huang, Peng; Zhang, Feifei; Jiang, Zizhen; Ye, Hongfei; Gao, Bin; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng; Wong, H-S Philip; Yu, Shimeng 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 resistance disturbance  resistive random access memory (RRAM)  half-selected (HS) cells  cross-point array  SPICE simulation  RRAM  MODEL  DEVICE   Modeling and Optimization of Bilayered TaOx RRAM Based on Defect Evolution and Phase Transition Effects 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Zhao, Yudi; Huang, Peng; Chen, Zhe; Liu, Chen; Li, Haitong; Chen, Bing; Ma, Wenjia; Zhang, Feifei; Gao, Bin; Liu, Xiaoyan; Kang, Jinfeng 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Monte Carlo simulation  oxygen vacancies  phase transition (P-T)  resistive random access memory (RRAM)  resistive switching (RS)  TaOx  RESISTIVE SWITCHING MEMORIES  METAL-OXIDE RRAM  TANTALUM-PENTOXIDE  DEVICES   Physical Understanding and Optimization of Resistive Switching Characteristics in Oxide-RRAM 其他 2016-01-01 Kang, J. F.; Huang, P.; Chen, Z.; Zhao, Y. D.; Liu, C.; Han, R. Z.; Liu, L. F.; Liu, X. Y.; Wang, Y. Y.; Gao, B. 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 Resistive random access memory (RRAM)  switching mechanism  physical-based model  resistive switching  reliability  optimization design  MODEL  MEMORY  OPERATIONS  MECHANISM   Self-Selection RRAM Cell With Sub-mu A Switching Current and Robust Reliability Fabricated by High-K/Metal Gate CMOS Compatible Technology 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Huang, Peng; Chen, Sijie; Zhao, Yudi; Chen, Bing; Gao, Bin; Liu, Lifeng; Chen, Yong; Zhang, Ziying; Bu, Weihai; Wu, Hanming; Liu, Xiaoyan; Kang, Jinfeng 收藏  |  浏览/下载：9/0  |  提交时间：2017/12/03 High-K/metal gate (HKMG)  nonliner  resistive random access memory (RRAM)  resistive switching  retention  ultralow switching current  OXIDE-BASED RRAM  DEVICE CHARACTERISTICS  CROSSBAR ARRAY  RESISTANCE  MODEL   Atomic Monte-Carlo Simulation for CBRAM with Various Filament Geometries 其他 2016-01-01 Zhao, Y. D.; Huang, P.; Guo, Z. H.; Lun, Z. Y.; Gao, B.; Liu, X. Y.; Kang, J. F. 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 RRAM  resistive switching  conductive filament  conductive bridge  Monte-Carlo  simulation  OXIDE  MEMORY   Nonassociative learning implementation by a single memristor-based multi-terminal synaptic device 期刊论文 NANOSCALE, 2016 Yang, Xue; Fang, Yichen; Yu, Zhizhen; Wang, Zongwei; Zhang, Teng; Yin, Minhui; Lin, Min; Yang, Yuchao; Cai, Yimao; Huang, Ru 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/04 GILL-WITHDRAWAL REFLEX  ELECTRONIC SYNAPSE  RESISTIVE MEMORY  APLYSIA  HABITUATION  PLASTICITY  SENSITIZATION  BEHAVIOR  DISHABITUATION  FACILITATION   Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits 期刊论文 ADVANCED MATERIALS, 2016 Huang, Peng; Kang, Jinfeng; Zhao, Yudi; Chen, Sijie; Han, Runze; Zhou, Zheng; Chen, Zhe; Ma, Wenjia; Li, Mu; Liu, Lifeng; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/04 memristors,nonvolatile logic,resistance switching,von Neumann bottleneck  RESISTIVE MEMORY  ARCHITECTURE  ELEMENT  NETWORK