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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 发表日期：2015     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain 其他 2015-01-01 Chang, Pengying; Liu, Xiaoyan; Zeng, Lang; Du, Gang 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Surface orientation  Strain  Hole mobility  InSb  III-V semiconductor  Modeling  V COMPOUND SEMICONDUCTORS  DEFORMATION POTENTIALS  INVERSION-LAYERS   Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015 Wang, Yijiao; Al-Ameri, Talib; Wang, Xingsheng; Georgiev, Vihar P.; Towie, Ewan; Amoroso, Salvatore Maria; Brown, Andrew R.; Cheng, Binjie; Reid, David; Riddet, Craig; Shifren, Lucian; Sinha, Saurabh; Yeric, Greg; Aitken, Robert; Liu, Xiaoyan; Kang, Jinfeng; Asenov, Asen 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 CMOS  electrostatics  nanowire transistors (NWs)  performance  quantum effects  TCAD  STATISTICAL VARIABILITY  INVERSION-LAYERS  GATE  CMOS  GENERATION  ELECTRON  DENSITY  FINFETS  DEVICES  MOSFETS   Hole mobility in InSb-based devices: Dependence on surface orientation, body thickness, and strain 期刊论文 44th European Solid-State Device Research Conference (ESSDERC), 2015 Chang, Pengying; Liu, Xiaoyan; Zeng, Lang; Du, Gang 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 Surface orientation  Strain  Hole mobility  InSb  III-V semiconductor  Modeling  V COMPOUND SEMICONDUCTORS  DEFORMATION POTENTIALS  INVERSION-LAYERS