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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2012    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices 期刊论文 ieee electron device letters, 2012 Lu, Yang; Gao, Bin; Fu, Yihan; Chen, Bing; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10 Conductive filament (CF)  hafnium oxide  non-volatile memory  RESET time  resistive switching  resistive random access memory (RRAM)  MECHANISM  RRAM   A New Dynamic Selector Based on the Bipolar RRAM for the Crossbar Array Application 期刊论文 ieee电子器件汇刊, 2012 Huang, Yinglong; Huang, Ru; Pan, Yue; Zhang, Lijie; Cai, Yimao; Yang, Gengyu; Wang, Yangyuan 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/10 Nonvolatile memory  resistive switching  RRAM  selector  HIGH-DENSITY  MEMORIES  DIODE   Resistive Switching in Organic Memory Device Based on Parylene-C With Highly Compatible Process for High-Density and Low-Cost Memory Applications 期刊论文 ieee电子器件汇刊, 2012 Huang, Ru; Tang, Yu; Kuang, Yongbian; Ding, Wei; Zhang, Lijie; Wang, Yangyuan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 Organic memory  polychloro-para-xylylene (parylene-C)  polymer  resistive switching  resistive random access memory (RRAM)  COPOLYMER   A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi Electrode 期刊论文 ieee electron device letters, 2012 Tran, X. A.; Zhu, W. G.; Gao, B.; Kang, J. F.; Liu, W. J.; Fang, Z.; Wang, Z. R.; Yeo, Y. C.; Nguyen, B. Y.; Li, M. F.; Yu, H. Y. 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/12 Resistive random access memory (RAM) (RRAM)  resistive switching  self-rectify  unipolar  MEMORY   Oxide-Based RRAM: A Novel Defect-Engineering-Based Implementation For Multilevel Data Storage 其他 2012-01-01 Kang, J. F.; Gao, B.; Chen, B.; Liu, L. F.; Liu, X. Y.; Yu, H. Y.; Wang, Z. R.; Yu, B. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 Resistive switching memory (RRAM)  multilevel data storage  defect-engineering