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Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111
Luo, WJ; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Guo, LC; Li, JP; Liu, HX; Chen, YL; Yang, FH; Li, JM
收藏  |  浏览/下载:44/0  |  提交时间:2010/03/08
Growth temperature dependences of InN films grown by MOCVD 期刊论文
applied surface science, 2008, 卷号: 255, 期号: 5, 页码: 3149-3152 part 2
Yang, CB; Wang, XL; Xiao, HL; Zhang, XB; Hua, GX; Ran, JX; Wang, CM; Li, JP; Li, JM; Wang, ZG
收藏  |  浏览/下载:69/1  |  提交时间:2010/03/08
InN  MOCVD  Mobility  
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD 期刊论文
superlattices and microstructures, 2008, 卷号: 44, 期号: 2, 页码: 153-159
Luo, WJ; Wang, XL; Guo, LC; Xiao, HL; Wang, CM; Ran, JX; Li, JP; Li, JM
收藏  |  浏览/下载:85/1  |  提交时间:2010/03/08
Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708
Ma ZY (Ma Zhi-Yong); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Xiao HL (Xiao Hong-Ling); Luo WJ (Luo Wei-Jun); Tang J (Tang Jian); Li JP (Li Jian-Ping); Li JM (Li Jin-Min)
收藏  |  浏览/下载:70/0  |  提交时间:2010/03/29
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition 期刊论文
microelectronics journal, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
Wang XY (Wang, Xiaoyan); Wang XL (Wang, Xiaoliang); Hu GX (Hu, Guoxin); Wang BZ (Wang, Baozhu); Ma ZY (Ma, Zhiyong); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Ran JX (Ran, Junxue); Li JP (Li, Jianping)
收藏  |  浏览/下载:34/0  |  提交时间:2010/03/29
Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 235-238
Ran JX (Ran Junxue); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Li JP (Li Jianping); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载:137/0  |  提交时间:2010/03/29
doping  
Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 800-803
Fang CB (Fang Cebao); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Hu GX (Hu Guoxin); Wang CM (Wang Cuimei); Wang XY (Wang Xiaoyan); Li JP (Li Jianping); Wang JX (Wang Junxi); Li CJ (Li Chengji); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zanguo)
收藏  |  浏览/下载:34/0  |  提交时间:2010/03/29
The effect of aln growth time on the electrical properties of al0.38ga0.62n/aln/gan hemt structures 期刊论文
Journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
作者:  Wang, CM;  Wang, XL;  Hu, GX;  Wang, JX;  Xiao, HL
收藏  |  浏览/下载:18/0  |  提交时间:2019/05/12
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏  |  浏览/下载:44/0  |  提交时间:2010/04/11
Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 8, 页码: 2187-2189
Wang BZ (Wang Bao-Zhu); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Wang XH (Wang Xin-Hua); Guo LC (Guo Lun-Chun); Xiao HL (Xiao Hong-Ling); Li JP (Li Jian-Ping); Zeng YP (Zeng Yi-Ping); Li JM (Li Jin-Min); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载:34/0  |  提交时间:2010/04/11


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