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| Demonstration of N-Polar III-Nitride Tunnel Junction LED 期刊论文
ACS PHOTONICS, 2020, 卷号: 7, 期号: 7, 页码: 1723-1728
作者: Yuantao Zhang; Gaoqiang Deng; Ye Yu; Yang Wang; Degang Zhao; Zhifeng Shi; Baolin Zhang; Xiaohang Li
  收藏 | 浏览/下载：25/0 | 提交时间：2021/06/28 |
| Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices 期刊论文
Journal of Materials Science: Materials in Electronics, 2019, 卷号: 30, 期号: 4, 页码: 3277-3282
作者: Gaoqiang Deng; Yuantao Zhang; Pengchong Li ; Ye Yu ; Xu Han ; Liang Chen ; Long Yan ; Xin Dong ; Degang Zhao; Guotong Du
收藏 | 浏览/下载：2/0 | 提交时间：2020/08/04 |
| Performance Improvement of GaN Based Laser Diode Using Pd/Ni/Au Metallization Ohmic Contact 期刊论文
Coatings, 2019, 卷号: 9, 页码: 291
作者: Wenjie Wang ; Wuze Xie ; Zejia Deng ; Haojun Yang ; Mingle Liao ; Junze Li ; Xiaojia Luo ; Song Sun ; Degang Zhao
收藏 | 浏览/下载：9/0 | 提交时间：2020/07/31 |
| Simulation and fabrication of N-polar GaN-based blue-green light- emitting diodes with p-type AlGaN electron blocking layer 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 卷号: 29, 期号: 11, 页码: 9321-9325
作者: Gaoqiang Deng; Yuantao Zhang; Ye Yu; Long Yan; Pengchong Li; Xu Han; Liang Chen; Degang Zhao; Guotong Du
收藏 | 浏览/下载：10/0 | 提交时间：2019/11/19 |
| Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate 期刊论文
Superlattices and Microstructures, 2018, 卷号: 116, 页码: 1-8
作者: Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Long Yan ; Pengchong Li ; Xu Han ; Liang Chen ; Degang Zhao ; Guotong Du
收藏 | 浏览/下载：23/0 | 提交时间：2019/11/19 |
| Growth of AlGaN-based multiple quantum wells on SiC substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 卷号: 29, 期号: 9, 页码: 7756-7762
作者: Xu Han; Yuantao Zhang; Pengchong Li ; Long Yan ; Gaoqiang Deng ; Liang Chen ; Ye Yu ; Degang Zhao ; Jingzhi Yin
收藏 | 浏览/下载：16/0 | 提交时间：2019/11/19 |
| Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiN x interlayer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 122, 页码: 74-79
作者: Gaoqiang Deng ; Yuantao Zhang ; Ye Yu ; Zhen Huang ; Xu Han ; Liang Chen ; Long Yan ; Pengchong Li ; Xin Dong ; Degang Zhao ; Guotong Du
收藏 | 浏览/下载：15/0 | 提交时间：2019/11/19 |
| Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 112, 期号: 15, 页码: 151607
作者: Gaoqiang Deng; Yuantao Zhang; Ye Yu; Long Yan; Pengchong Li; Xu Han; Liang Chen; Degang Zhao; Guotong Du
收藏 | 浏览/下载：10/0 | 提交时间：2019/11/19 |
| The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer 期刊论文
CrystEngComm, 2017, 卷号: 19, 页码: 4330–4337
作者: Gaoqiang Deng; Yuantao Zhang; Zhen Huang; Long Yan; Pengchong Li
收藏 | 浏览/下载：17/0 | 提交时间：2018/11/30 |
| The property optimization of n-GaN films grown on n-SiC substrates by incorporating a SiNx interlayer 期刊论文
J Mater Sci: Mater Electron, 2017, 卷号: 28, 页码: 6008–6014
作者: Shuang Cui; Yuantao Zhang; Zhen Huang; Gaoqiang Deng; Baozhu Li
收藏 | 浏览/下载：10/0 | 提交时间：2018/11/30 |
