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| 非挥发性阻变存储器件及其制备方法 专利 专利号: US10134983, 申请日期: 2018-11-20, 公开日期: 2016-08-11 作者: 刘琦 ; 刘明 ; 孙海涛; 张科科; 龙世兵![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:36/0  |  提交时间:2019/03/27 |
| C-V and J-V investigation of HfO2/Al2O3 bilayer dielectrics MOSCAPs on (100) β-Ga2O3 期刊论文 AIP Advances, 2018 作者: Xue HW(薛惠文); Dong H(董航); Mu WX(穆文祥); Hu Y(胡媛) ; He QM(何启鸣)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:60/0  |  提交时间:2019/04/18 |
| Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2018 作者: Cao RR(曹荣荣); Wang Y(王艳) ; Zhao SJ(赵盛杰) ; Yang Y(杨阳) ; Zhao XL(赵晓龙)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:15/0  |  提交时间:2019/04/10 |
| Modulating 3D memristor synapse by analog spiking pulses for bioinspired neuromorphic computing 期刊论文 SCIENCE CHINA, 2018 作者: Liu Q(刘琦) ; Zhang XM(张续猛); Luo Q(罗庆) ; Zhao XL(赵晓龙); Lv HB(吕杭炳)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2019/04/10 |
| Self-Rectifying and Forming-Free Resistive-Switching Device for Resistive-Switching Device for 期刊论文 IEEE Electron Device Letter, 2018 作者: Luo Q(罗庆); Zhang XM(张续猛); Hu Y(胡媛); Gong TC(龚天成); Xu XX(许晓欣)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:17/0  |  提交时间:2019/04/10 |
| Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects 期刊论文 Advanced Materials, 2018 作者: Zhao XL(赵晓龙); Liu Q(刘琦) ; Liu S(刘森); Niu JB(牛洁斌) ; Zhang XM(张续猛)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:23/0  |  提交时间:2019/04/10 |
| An Artificial Neuron Based on a Threshold Switching Memristor 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2018 作者: Zhang XM(张续猛); Wang W(王伟); Liu Q(刘琦) ; Zhao XL(赵晓龙); Wei JS(魏劲松)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:22/0  |  提交时间:2019/04/10 |
| 一种有效提高阻变存储器耐久性的方法 专利 专利号: CN201410643264.9, 申请日期: 2018-01-09, 公开日期: 2015-03-25 作者: 龙世兵 ; 王国明; 张美芸; 李阳 ; 许定林
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2019/03/06 |
| design of cmos compatible, high-speed, highly-stable complementary switching with multilevel operation in 3D vertically stacked novel HfO2/Al2O3/TiOx (HAT) RRAM 期刊论文 advanced electronic materials, 2018 作者: Writam Banerjee; Zhang XM(张续猛); Luo Q(罗庆) ; Lv HB(吕杭炳) ; Liu Q(刘琦)![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:11/0  |  提交时间:2019/04/18 |
| Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties 期刊论文 AIP Advances, 2017 作者: Jian GZ(菅光忠); He QM(何启鸣); Dong H(董航); Tan Y(覃愿); Zhang Y(张颖)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:44/0  |  提交时间:2018/07/13 |