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Plasma passivation of near-interface oxide traps and voltage stability in SiC MOS capacitors 期刊论文
JOURNAL OF APPLIED PHYSICS, 2019, 卷号: 125
作者:  Sun, Yunong;  Yang, Chao;  Yin, Zhipeng;  Qin, Fuwen;  Wang, Dejun
收藏  |  浏览/下载:13/0  |  提交时间:2019/12/02
Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidation annealing in 4H-SiC MOS capacitors 期刊论文
APPLIED SURFACE SCIENCE, 2019, 卷号: 488, 页码: 293-302
作者:  Yang, Chao;  Zhang, Fanglong;  Yin, Zhipeng;  Su, Yan;  Qin, Fuwen
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/02
Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 卷号: 52
作者:  Yang, Chao;  Gu, Zhenghao;  Yin, Zhipeng;  Qin, Fuwen;  Wang, Dejun
收藏  |  浏览/下载:11/0  |  提交时间:2019/12/02
Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study 期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26
作者:  Li, Wenbo;  Li, Ling;  Wang, Fangfang;  Zheng, Liu;  Xia, Jinghua
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/02
Low temperature synthesis of GaN films on ITO substrates by ECR-PEMOCVD 期刊论文
VACUUM, 2013, 卷号: 92, 页码: 77-80
作者:  Zhao, Yue;  Qin, Fuwen;  Bai, Yizhen;  Ju, Zhenhe;  Zhao, Yan
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/11
Effects of Substrate Pretreatment Conditions on Quality of GaN Epilayer 期刊论文
Semiconductor Photonics and Technology, 2003, 卷号: 9, 页码: 26
作者:  Qin Fuwen;  Gu Biao;  Xu Yin;  Wang Sansheng;  Yang Dazhi
收藏  |  浏览/下载:3/0  |  提交时间:2020/01/02


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