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科研机构
大连理工大学 [51]
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期刊论文 [47]
会议论文 [4]
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2019 [3]
2018 [4]
2017 [5]
2016 [4]
2015 [6]
2014 [10]
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专题:大连理工大学
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Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3
期刊论文
CHINESE PHYSICS B, 2019, 卷号: 28
作者:
Yang, Chao
;
Liang, Hongwei
;
Zhang, Zhenzhong
;
Xia, Xiaochuan
;
Zhang, Heqiu
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2019/12/02
Ga2O3 single crystal
solar-blind
photodetector
high temperature
Preparation of high-quality CuGa2O4 film via annealing process of Cu/beta-Ga2O3
期刊论文
JOURNAL OF MATERIALS SCIENCE, 2019, 卷号: 54, 页码: 11111-11116
作者:
Shi, Jianjun
;
Liang, Hongwei
;
Xia, Xiaochuan
;
Li, Zhuo
;
Long, Ze
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2019/12/02
Copper
Copper compounds
Crystallinity
Film preparation
Lattice mismatch
Metallic films
Semiconductor quantum wells
Single crystals
X ray diffraction analysis, Annealing methods
Annealing process
Epitaxial relationships
Full width half maximum
High resolution X ray diffraction
Preferred orientations
Single crystal substrates
[110] direction, Gallium compounds
Low resistivity ohmic contacts on lightly doped n-type -Ga2O3 using Mg/Au
期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 卷号: 30, 页码: 3860-3864
作者:
Shi, Jianjun
;
Xia, Xiaochuan
;
Liang, Hongwei
;
Abbas, Qasim
;
Liu, Jun
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2019/12/02
Electric contactors
Electrodes
Gallium compounds
Ohmic contacts, Annealed samples
Annealing temperatures
Contact electrodes
Contact mechanism
Specific contact resistances
Surface profiles
Transmission-line measurements
Voltage characteristics, Annealing
Self-powered SBD solar-blind photodetector fabricated on the single crystal of beta-Ga2O3
期刊论文
RSC ADVANCES, 2018, 卷号: 8, 页码: 6341-6345
作者:
Yang, Chao
;
Liang, Hongwei
;
Zhang, Zhenzhong
;
Xia, Xiaochuan
;
Tao, Pengcheng
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/02
High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2018, 卷号: 893, 页码: 39-42
作者:
Zhu, Zhifu
;
Zhang, Heqiu
;
Liang, Hongwei
;
Tang, Bin
;
Peng, Xincun
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/02
High temperature
GaN
pin
Alpha particle
Detector
Anomalous indium incorporation and optical properties of high indium content InGaN grown by MOCVD
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: 735, 页码: 1239-1244
作者:
Liu, Jianxun
;
Liang, Hongwei
;
Xia, Xiaochuan
;
Abbas, Qasim
;
Liu, Yang
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/02
InGaN
High indium content
Optical properties
Indium incorporation
MOCVD
Growth Pressure Controlled Nucleation Epitaxy of Pure Phase epsilon- and beta-Ga2O3 Films on Al2O3 via Metal-Organic Chemical Vapor Deposition
期刊论文
CRYSTAL GROWTH & DESIGN, 2018, 卷号: 18, 页码: 1147-1154
作者:
Chen, Yuanpeng
;
Xia, Xiaochuan
;
Liang, Hongwei
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/02
A Mixture of Ionic Liquid and Ethanol Used for Galvanostatic Electrodeposition of CuInxGa1-xSe2 Thin Films
期刊论文
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2017, 卷号: 164, 页码: D969-D977
作者:
Lian, Ye
;
Liu, Anmin
;
Ma, Xiaochuan
;
Zhang, Jinqiu
;
Yang, Peixia
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/02
Synthesis of GaN network by nitridation of hexagonal epsilon-Ga2O3 film
期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 卷号: 28, 页码: 2598-2601
作者:
Xia, Xiaochuan
;
Liang, Hongwei
;
Geng, Xinlei
;
Chen, Yuanpeng
;
Yang, Chao
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/02
Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal-Organic Chemical Vapor Deposition
期刊论文
CRYSTAL GROWTH & DESIGN, 2017, 卷号: 17, 页码: 3411-3418
作者:
Liu, Jianxun
;
Liang, Hongwei
;
Xia, Xiaochuan
;
Liu, Yang
;
Liu, Jun
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/02
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