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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 内容类型：其他     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A Comparison Study of Silicon Nanowire Transistor with Schottky-Barrier Source/Drain and Doped Source/Drain 其他 2009-01-01 Kang, Zhaoyi; Zhang, Liangliang; Wang, Runsheng; Huang, Ru 收藏  |  浏览/下载：1/0  |  提交时间：2015/11/16 PERFORMANCE  MOSFETS   New Insights into Oxide Traps Characterization in Gate-All-Around Nanowire Transistors with TiN Metal Gates Based on Combined I(g)-I(d) RTS Technique 其他 2009-01-01 Zhang, Liangliang; Zhuge, Jing; Wang, Runsheng; Huang, Ru; Liu, Changze; Wu, Dake; Kang, Zhaoyi; Kim, Done-Won; Park, Donggun; Wang, Yangyuan 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 RANDOM TELEGRAPH SIGNALS  NOISE  MOSFETS  FLUCTUATIONS  CARRIER   New insights into oxide traps characterization in gate-all-around nanowire transistors with TiN metal gates based on combined Ig-Id RTS technique 其他 2009-01-01 Zhang, Liangliang; Zhuge, Jing; Wang, Runsheng; Huang, Ru; Liu, Changze; Wu, Dake; Kang, Zhaoyi; Kim, Dong-Won; Park, Donggun; Wang, Yangyuan 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13 A Comprehensive Study on Schottky Barrier Nanowire Transistors (SB-NWTs): Principle, Physical Limits and Parameter Fluctuations 其他 2008-01-01 Zhang, Liangliang; Kang, Zhaoyi; Wang, Runsheng; Huang, Ru 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 FIELD-EFFECT TRANSISTORS  PERFORMANCE  SOURCE/DRAIN  MOSFETS