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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：其他     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 New Observations of Suppressed Randomization in LER/LWR of Si Nanowire Transistors: Experiments and Mechanism Analysis 其他 2010-01-01 Wang, Runsheng; Yu, Tao; Huang, Ru; Ai, Yujie; Pu, Shuangshuang; Hao, Zhihua; Zhuge, Jing; Wang, Yangyuan 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 CMOS TECHNOLOGY  SILICON  INTEGRATION   Investigations on the impact of the parasitic bottom transistor in gate-all-around silicon nanowire SONOS memory cells fabricated on bulk Si substrate 其他 2009-01-01 Ai, Yujie; Huang, Ru; Wang, Yiqun; Zhuge, Jing; Wu, Dake; Wang, Runsheng; Tang, Poren; Zhang, Lijie; Hao, Zhihua; Wang, Yangyuan 收藏  |  浏览/下载：7/0  |  提交时间：2015/11/13 Novel structural Ti/Al-based ohmic contacts on AlGaN/GaN heterostructures 其他 2008-01-01 Dong, Zhihua; Wang, Jinyan; Yu, Min; Hao, Yilong; Wen, C. P.; Wang, Yangyuan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 AlGaN/GaN  ohmic contacts  surface morphology  PERFORMANCE  HEMTS  POWER   Novel structural Ti/Al-based ohmic contacts on AlGaN/GaN heterostructures 其他 2008-01-01 Zhihua Dong; Jinyan Wang; Min Yu; Yilong Hao; Yangyuan Wang 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 AlGaN/GaN  ohmic contacts  surface morphology  AlGaN/GaN  ohmic contacts  surface morphology   Enhanced device performance of AlGaN/GaN HEMTs using thermal oxidation of electron-beam deposited Aluminum for gate oxide 其他 2008-01-01 Chen, Hongwei; Wang, Jinyan; Xu, Chuan; Yu, Min; Fu, Yang; Dong, Zhihua; Xu, Fujun; Hao, Yilong; Wen, Cheng P. 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13 AlGaN/GaN MOS-HEMTs  leakage current  thermal oxidation  electron-beam evaporation  FIELD-EFFECT TRANSISTORS  AL2O3