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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：Physics     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Chemical vapor deposition growth of scalable monolayer polycrystalline graphene films with millimeter-sized domains 期刊论文 MATERIALS LETTERS, 2018, 卷号: 215, 页码: 259-262 作者:  Yin, Shaoqian;  Zhang, Xuewei;  Xu, Chen;  Wang, Yang;  Wang, Yunlu 收藏  |  浏览/下载：35/0  |  提交时间：2018/12/04 Single-crystal Graphene  Copper Foils  High-quality  Surface  Oxygen  Nucleation   Thermodynamics of noncommutative high-dimensional AdS black holes with non-Gaussian smeared matter distributions 期刊论文 EUROPEAN PHYSICAL JOURNAL C, 2016, 卷号: 76, 期号: 4, 页码: 217 作者:  Miao, YG;  Xu, ZM 收藏  |  浏览/下载：12/0  |  提交时间：2019/04/08 FIELD-THEORY   Thermodynamics of noncommutative high-dimensional AdS black holes with non-Gaussian smeared matter distributions 期刊论文 EUROPEAN PHYSICAL JOURNAL C, 2016, 卷号: 76, 期号: 4, 页码: 217 作者:  Miao, YG;  Xu, ZM;  Xu, ZM (reprint author), Nankai Univ, Sch Phys, Tianjin 300071, Peoples R China.;  Miao, YG (reprint author), Chinese Acad Sci, Inst Theoret Phys, State Key Lab Theoret Phys, POB 2735, Beijing 100190, Peoples R China.;  Miao, YG (reprint author), CERN, PH TH Div, CH-1211 Geneva 23, Switzerland. 收藏  |  浏览/下载：15/0  |  提交时间：2017/10/13 Large magnetic moment of gadolinium substituted topological insulator: Bi1.98Gd0.02Se3 期刊论文 APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 24, 页码: 242403 Song, YR; Yang, F; Yao, MY; Zhu, FF; Miao, L; Xu, JP; Wang, MX; Li, H; Yao, X; Ji, FH; Qiao, S; Sun, Z; Zhang, GB; Gao, B; Liu, CH; Qian, D; Gao, CL; Jia, JF 收藏  |  浏览/下载：23/0  |  提交时间：2013/04/17 Large magnetic moment of gadolinium substituted topological insulator: Bi1.98Gd0.02Se3 期刊论文 APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 24, 页码: 242403 Song, YR; Yang, F; Yao, MY; Zhu, FF; Miao, L; Xu, JP; Wang, MX; Li, H; Yao, X; Ji, FH; Qiao, S; Sun, Z; Zhang, GB; Gao, B; Liu, CH; Qian, D; Gao, CL; Jia, JF 收藏  |  浏览/下载：18/0  |  提交时间：2013/05/10 Physics  Applied   The influence of indium surfactant on the electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition 期刊论文 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 卷号: 43, 期号: 14, 页码: 145402 作者:  Song, J;  Xu, FJ;  Miao, ZL;  Huang, S;  Wang, Y 收藏  |  浏览/下载：9/0  |  提交时间：2016/06/29 Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films 期刊论文 JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 107, 期号: 2, 页码: 23528 作者:  Xu, FJ;  Shen, B;  Lu, L;  Miao, ZL;  Song, J 收藏  |  浏览/下载：22/0  |  提交时间：2016/06/29 gallium compounds  III-V semiconductors  MOCVD  photoluminescence  positron annihilation  vacancies (crystal)  wide band gap semiconductors