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Improved carrier confinement and stimulated recombination rate in GaN-based vertical-cavity surface-emitting lasers with buried p-AlGaN inversion layer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2020, 卷号: 146
作者:  Cui, Mei;  Gao, Yuanbin;  Hang, Sheng;  Qiu, Xuejiao;  Zhang, Yonghui
收藏  |  浏览/下载:50/0  |  提交时间:2020/12/16
Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 卷号: 53, 期号: 48
作者:  Guo, Wei;  Xu, Houqiang;  Chen, Li;  Yu, Huabin;  Jiang, Jie'an
收藏  |  浏览/下载:133/0  |  提交时间:2020/12/16


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