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Origin of the failed ensemble average rule for the band gaps of disordered nonisovalent semiconductor alloys 期刊论文
physical review b, 2014, 卷号: 90, 期号: 11, 页码: 115201
Ma, J; Deng, HX; Luo, JW; Wei, SH
收藏  |  浏览/下载：23/0  |  提交时间：2015/03/25
Effect of hydrogen passivation on the electronic structure of ionic semiconductor nanostructures 期刊论文
physical review b, 2012, 卷号: 85, 期号: 19, 页码: 195328
Deng, HX; Li, SS; Li, JB; Wei, SH
收藏  |  浏览/下载：21/0  |  提交时间：2013/03/17
First-principles study of magnetic properties in Mo-doped graphene 期刊论文
journal of physics-condensed matter, 2011, 卷号: 23, 期号: 34, 页码: 346001
Kang J; Deng HX; Li SS; Li JB
收藏  |  浏览/下载：9/0  |  提交时间：2011/09/14
Origin of antiferromagnetism in CoO: A density functional theory study 期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 16, 页码: art. no. 162508
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Xia JB (Xia Jian-Bai); Walsh A (Walsh Aron); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：116/2  |  提交时间：2010/05/07
Quantum Confinement Effects and Electronic Properties of SnO2 Quantum Wires and Dots 期刊论文
journal of physical chemistry c, 2010, 卷号: 114, 期号: 11, 页码: 4841-4845
Deng HX (Deng Hui-Xiong); Li SS (Li Shu-Shen); Li JB (Li Jingbo)
收藏  |  浏览/下载：79/17  |  提交时间：2010/04/13
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：47/0  |  提交时间：2010/12/27
Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057101
Deng HX (Deng Hui-Xiong); Jiang XW (Jiang Xiang-Wei); Tang LM (Tang Li-Ming)
收藏  |  浏览/下载：101/3  |  提交时间：2010/05/24
Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 8, 页码: art.no.084510
Jiang XW (Jiang Xiang-Wei); Deng HX (Deng Hui-Xiong); Li SS (Li Shu-Shen); Luo JW (Luo Jun-Wei); Wang LW (Wang Lin-Wang)
收藏  |  浏览/下载：159/62  |  提交时间：2010/03/08
A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs 期刊论文
ieee transactions on electron devices, 2008, 卷号: 55, 期号: 7, 页码: 1720-1726
Jiang, XW; Deng, HX; Luo, JW; Li, SS; Wang, LW
收藏  |  浏览/下载：153/1  |  提交时间：2010/03/08
Multiple valley couplings in nanometer Si metal-oxide-semiconductor field-effect transistors 期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 12, 页码: art. no. 124507
Deng, HX; Jiang, XW; Luo, JW; Li, SS; Xia, JB; Wang, LW
收藏  |  浏览/下载：65/5  |  提交时间：2010/03/08

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