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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体物理    内容类型：期刊论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy 期刊论文 journal of crystal growth, 2007, 卷号: 301, 期号: 0, 页码: 125-128 Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.); Fang, ZD (Fang, Z. D.); Huang, SS (Huang, S. S.); Zhang, SY (Zhang, S. Y.); Wu, DH (Wu, D. H.); Shun, Z (Shun, Z.); Han, Q (Han, Q.); Wu, RH (Wu, R. H.) 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29 quantum wells   Application of rapid thermal annealing on 1.3-1.55 mu m GaInNAs(Sb) lasers grown by molecular beam epitaxy 期刊论文 journal of crystal growth, 2007, 卷号: 301, 期号: 0, 页码: 979-983 Zhao, H (Zhao, H.); Xu, YQ (Xu, Y. Q.); Ni, HQ (Ni, H. Q.); Zhang, SY (Zhang, S. Y.); Han, Q (Han, Q.); Du, Y (Du, Y.); Yang, XH (Yang, X. H.); Wu, RH (Wu, R. H.); Niu, ZC (Niu, Z. C.) 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29 photoluminescence   The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文 journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497 Wu DH; Niu ZC; Zhang SY; Ni HQ; He ZH; Sun Z; Han Q; Wu RH 收藏  |  浏览/下载：86/0  |  提交时间：2010/04/11 photoluminescence  molecular beam epitaxy  quantum wells  nitrides  semiconducting III-V materials  IMPROVED LUMINESCENCE EFFICIENCY  LASER-DIODES  TEMPERATURE  SURFACTANT  EMISSION  NITROGEN  ORIGIN   Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 4, 页码: 1005-1008 作者:  Yang XH 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 LASERS  TEMPERATURE  PHOTOLUMINESCENCE   Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers 期刊论文 semiconductor science and technology, 2006, 卷号: 21, 期号: 3, 页码: 279-282 作者:  Xu YQ;  Yang XH 收藏  |  浏览/下载：76/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  IMPROVED LUMINESCENCE EFFICIENCY  QUANTUM-WELLS  ORIGIN   GaAs-based room-temperature continuous-wave 1.59 mu m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy 期刊论文 applied physics letters, 2005, 卷号: 87, 期号: 23, 页码: art.no.231121 Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; Zhao, H; Peng, HL; Xu, YQ; Li, SY; He, ZH; Ren, ZW; Han, Q; Yang, XH; Du, Y; Wu, RH 收藏  |  浏览/下载：130/37  |  提交时间：2010/03/17 1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs 期刊论文 applied physics letters, 2005, 卷号: 87, 期号: 11, 页码: art.no.111105 Han, Q; Yang, XH; Niu, ZC; Ni, HQ; Xu, YQ; Zhang, SY; Du, Y; Peng, LH; Zhao, H; Tong, CZ; Wu, RH; Wang, QM 收藏  |  浏览/下载：78/18  |  提交时间：2010/03/17 QUANTUM-WELL LASERS   High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy 期刊论文 applied physics letters, 2005, 卷号: 87, 期号: 16, 页码: art.no.161911 Zhang SY; Niu ZC; Ni HQ; Wu DH; He ZH; Sun Z; Han Q; Wu RH 收藏  |  浏览/下载：106/35  |  提交时间：2010/03/17 IMPROVED LUMINESCENCE EFFICIENCY   The micro-magnetic structures of Mn+ ion-implanted GaSb 期刊论文 japanese journal of applied physics part 1-regular papers short notes & review papers, 2003, 卷号: 42, 期号: 6a, 页码: 3389-3391 Zhang FQ; Chen NF; Liu ZK; Chai CL; Yang SY; Yang JL; Wu JL; Lin LY; Callaghan FD; Li T; Foxton CT; Bates CA 收藏  |  浏览/下载：101/0  |  提交时间：2010/08/12 magnetic micro-structures  GaSb  MFM  magnetic domain  ion implantation  FORCE MICROSCOPE  SEMICONDUCTORS  GAMNAS