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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Reversible transition between coherently strained BiFeO3 and the metastable pseudotetragonal phase on (LaAlO3)0.3(Sr2AlTaO6)0.7 (001) 期刊论文 JOURNAL OF APPLIED PHYSICS, 2017, 卷号: 121, 页码: 054102 作者:  Z. Fu;  Z. G. Yin;  X. W. Zhang;  N. F. Chen;  Y. J. Zhao 收藏  |  浏览/下载：34/0  |  提交时间：2018/05/30 A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition 期刊论文 ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31 作者:  X. F. Liu;  z G. G. Yan;  Z. W. Shen;  Z. X.Wen;  L. X. Tian 收藏  |  浏览/下载：32/0  |  提交时间：2018/06/15 Enhanced efficiency of graphene-silicon Schottky junction solar cells by doping with Au nanoparticles 期刊论文 applied physics letters, 2014, 卷号: 105, 期号: 18, 页码: 183901 Liu, X; Zhang, X. W.; Yin, Z. G.; Meng, J. H.; Gao, H. L.; Zhang, L. Q.; Zhao, Y. J.; Wang, H. L. 收藏  |  浏览/下载：14/0  |  提交时间：2015/03/20 Third-order photonic-crystal distributed-feedback quantum cascade lasers 期刊论文 photonics and nanostructures-fundamentals and applications, 2012, 卷号: 10, 期号: 4, 页码: 435-439 Zhang JC (Zhang, J. C.); Liu FQ (Liu, F. Q.); Wang LJ (Wang, L. J.); Zhao LH (Zhao, L. H.); Liu WF (Liu, W. F.); Liu JQ (Liu, J. Q.); Li L (Li, L.); Wang ZG (Wang, Z. G.) 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/26 Identification of vacancies in electron irradiated GaSb by coincidence Doppler broadening spectroscopy 期刊论文 materials letters, 2007, 卷号: 61, 期号: 4-5, 页码: 1187-1189 Shao, YD (Shao, Y. D.); Wang, Z (Wang, Z.); Dai, YQ (Dai, Y. Q.); Zhao, YW (Zhao, Y. W.); Tang, FY (Tang, F. Y.) 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29 GaSb   Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 31-35 Zhao C (Zhao C.); Chen YH (Chen Y. H.); Zhao M (Zhao Man); Zhang CL (Zhang C. L.); Xu B (Xu B.); Yu LK (Yu L. K.); Sun J (Sun J.); Lei W (Lei W.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 Monte Carlo simulation  molecular beam epitaxy  kinetic effects  quantum dot  LAYER   Electron irradiation-induced defects in InP pre-annealed at high temperature 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Zhao, YW (Zhao, Y. W.); Dong, ZY (Dong, Z. Y.); Deng, AH (Deng, A. H.) 收藏  |  浏览/下载：160/28  |  提交时间：2010/03/29 indium phosphide   Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11 indium phosphide  defect  irradiation  THERMALLY STIMULATED CURRENT  UNDOPED SEMIINSULATING INP  DEEP-LEVEL DEFECTS  FRENKEL PAIRS  FE  SPECTROSCOPY  PHOSPHIDE  AMBIENT  TRAPS