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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文 microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111 Luo, WJ; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Guo, LC; Li, JP; Liu, HX; Chen, YL; Yang, FH; Li, JM 收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08 AlGaN/GaN  high electron mobility transistor (HEMT)  Si (111)   Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer 期刊论文 chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708 Ma ZY (Ma Zhi-Yong); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Xiao HL (Xiao Hong-Ling); Luo WJ (Luo Wei-Jun); Tang J (Tang Jian); Li JP (Li Jian-Ping); Li JM (Li Jin-Min) 收藏  |  浏览/下载：70/0  |  提交时间：2010/03/29 ELECTRON-MOBILITY TRANSISTORS   Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition 期刊论文 microelectronics journal, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841 Wang XY (Wang, Xiaoyan); Wang XL (Wang, Xiaoliang); Hu GX (Hu, Guoxin); Wang BZ (Wang, Baozhu); Ma ZY (Ma, Zhiyong); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Ran JX (Ran, Junxue); Li JP (Li, Jianping) 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29 AlxGa1-xN   Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD 期刊论文 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 235-238 Ran JX (Ran Junxue); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Li JP (Li Jianping); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：137/0  |  提交时间：2010/03/29 doping   Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer 期刊论文 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 800-803 Fang CB (Fang Cebao); Wang XL (Wang Xiaoliang); Xiao HL (Xiao Hongling); Hu GX (Hu Guoxin); Wang CM (Wang Cuimei); Wang XY (Wang Xiaoyan); Li JP (Li Jianping); Wang JX (Wang Junxi); Li CJ (Li Chengji); Zeng YP (Zeng Yiping); Li JM (Li Jinmin); Wang ZG (Wang Zanguo) 收藏  |  浏览/下载：34/0  |  提交时间：2010/03/29 deep defect   The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文 journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418 Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP 收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11 2DEG  MOCVD  semiconducting III-V materials  HEMT  power devices  HETEROSTRUCTURES  PASSIVATION  SAPPHIRE  ALGAN  FIELD  GAS   Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 8, 页码: 2187-2189 Wang BZ (Wang Bao-Zhu); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Wang XH (Wang Xin-Hua); Guo LC (Guo Lun-Chun); Xiao HL (Xiao Hong-Ling); Li JP (Li Jian-Ping); Zeng YP (Zeng Yi-Ping); Li JM (Li Jin-Min); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：34/0  |  提交时间：2010/04/11 LIGHT-EMITTING-DIODES   REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING 期刊论文 journal of applied physics, 1992, 卷号: 71, 期号: 10, 页码: 4843-4847 XIAO GM; YIN SD; ZHANG JP; DONG AH; ZHU PR; LIU JR 收藏  |  浏览/下载：7/0  |  提交时间：2010/11/15 QUALITY