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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The Research Progress of Quantum Dot Lasers and Photodetectors in China 期刊论文 journal of nanoscience and nanotechnology, 2011, 卷号: 11, 期号: 11 s1, 页码: 9345-9356 Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Xu B (Xu Bo); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：14/0  |  提交时间：2012/02/22 High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801 Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：151/30  |  提交时间：2010/04/13 THRESHOLD CURRENT  ROOM-TEMPERATURE  DEPENDENCE  PHOTOLUMINESCENCE   Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101 Cao YL (Cao Yu-Lian); Yang T (Yang Tao); Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Gu YX (Gu Yong-Xian); Wang XD (Wang Xiao-Dong); Wang Q (Wang Qing); Ma WQ (Ma Wen-Quan); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：224/51  |  提交时间：2010/05/24 excited states  gallium arsenide  III-V semiconductors  indium compounds  laser tuning  optical films  quantum dot lasers  silicon compounds  tantalum compounds  TEMPERATURE-DEPENDENCE  THRESHOLD  PERFORMANCE  GAIN   Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文 journal of applied physics, 2010, 卷号: 107, 期号: 1, 页码: art. no. 013102 Xu PF (Xu Peng-Fei); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Cao YL (Cao Yu-Lian); Gu; YX (Gu Yong-Xian); Liu Y (Liu Yu); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：208/54  |  提交时间：2010/04/13 energy states  optical modulation  quantum dot lasers  THRESHOLD CURRENT  WELL  GAIN