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Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文
phys. status solidi a, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161
He Kang; Quan Wang; Hongling Xiao; Cuimei Wang; Lijuan Jiang; Chun Feng; Hong Chen; Haibo Yin; Shenqi Qu; Enchao Peng; Jiamin Gong; Xiaoliang Wang; Baiquan Li; Zhanguo Wang; Xun Hou
收藏  |  浏览/下载:33/0  |  提交时间:2016/03/29
Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 15, 页码: 4507
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang
收藏  |  浏览/下载:22/0  |  提交时间:2014/03/18
Growth and characterization of AlGaNAlNGaNAlGaN double heterojunction structures with AlGaN as buffer layers 期刊论文
journal of crystal growth, 2013, 卷号: 383, 页码: 25–29
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang
收藏  |  浏览/下载:14/0  |  提交时间:2014/03/18
High performance AlGaNGaN power switch with Si3N4 Insulation 期刊论文
the european physical journal applied physics, 2013, 卷号: 61, 期号: 1, 页码: 10101
Lin, Defeng; Wang, Xiaoliang; Xiao, Hongling; Kang, He; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong; Deng, Qingwen; Bi, Yang; Zhang, Jingwen; Hou, Xun
收藏  |  浏览/下载:27/0  |  提交时间:2014/03/18
Bipolar characteristics of AlGaNAlNGaNAlGaN double heterojunction structure with AlGaN as buffer layer 期刊论文
journal of alloys and compounds, 2013, 卷号: 576, 页码: 48–53
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Xun Hou, Zhanguo Wang
收藏  |  浏览/下载:21/0  |  提交时间:2014/03/18
Numerical optimization of carrier confinement characteristics in (AlxGa1-xN/AlN)SLs/GaN heterostructures 期刊论文
physica b-condensed matter, 2012, 卷号: 407, 期号: 18, 页码: 3920-3924
Ding JQ (Ding, Jieqin); Wang XL (Wang, Xiaoliang); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Yin HB (Yin, Haibo); Chen H (Chen, Hong); Feng C (Feng, Chun); Jiang LJ (Jiang, Lijuan)
收藏  |  浏览/下载:11/0  |  提交时间:2013/03/27
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Ding JQ (Ding, Jieqin); Wang XL (Wang, Xiaoliang); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Chen H (Chen, Hong); Bi Y (Bi, Yang); Deng QW (Deng, Qinwen); Zhang JW (Zhang, Jingwen); Hou X (Hou, Xun)
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/26
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Ding, Jieqin; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Chen, Hong; Bi, Yang; Deng, Qinwen; Zhang, Jingwen; Hou, Xun
收藏  |  浏览/下载:13/0  |  提交时间:2013/04/19
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Hou QF;  Zhang ML
收藏  |  浏览/下载:54/0  |  提交时间:2010/03/09
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1521-1525
作者:  Xiao Hongling;  Wang Cuimei
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/23


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