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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文 Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466 作者:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN 收藏  |  浏览/下载：21/0  |  提交时间：2018/07/11 XPS study of impurities in Si-doped AlN film 期刊论文 surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：31/0  |  提交时间：2017/03/10 Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文 applied physics a, 2016, 卷号: 122, 期号: 9 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：16/0  |  提交时间：2017/03/10 Effects of Si-doping on field emission characteristics of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文 materials technology, 2016 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. Li; S. T. Liu; H. Yang; L. Q. Zhang; J. P. Liu; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：22/0  |  提交时间：2017/03/10 Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes 期刊论文 optics express, 2016, 卷号: 24, 期号: 13, 页码: 13824-13831 J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：15/0  |  提交时间：2017/03/10 Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 9, 页码: art.no.092114 Wang H (Wang H.); Huang Y (Huang Y.); Sun Q (Sun Q.); Chen J (Chen J.); Wang LL (Wang L. L.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Zhang SM (Zhang S. M.); Jiang DS (Jiang D. S.); Wang YT (Wang Y. T.); Yang H (Yang H.) 收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11 X-RAY-DIFFRACTION  ELECTRON-TRANSPORT  EPITAXIAL GAN  BAND-GAP  DISLOCATIONS  SAPPHIRE  ALN   Small-signal power measuring technique for measuring the frequency response of electroabsorption modulators 期刊论文 ieee photonics technology letters, 2006, 卷号: 18, 期号: 21-24, 页码: 2451-2453 Huang, HP (Huang, H. P.); Zhu, NH (Zhu, N. H.); Hasen, QQG (Hasen, Q. Q. G.); Liu, Y (Liu, Y.); Wang, X (Wang, X.); Pun, EYB (Pun, E. Y. B.); Chung, PS (Chung, P. S.) 收藏  |  浏览/下载：60/0  |  提交时间：2010/03/29 electroabsorption (EA) modulator   Unselective regrowth of 1.5-mu m InGaAsP multiple-quantum-well distributed-feedback buried heterostructure lasers 期刊论文 optical engineering, 2006, 卷号: 45, 期号: 9, 页码: art.no.090501 Feng W (Feng W.); Ding Y (Ding Y.); Pan JQ (Pan J. Q.); Zhao LJ (Zhao L. J.); Zhu HL (Zhu H. L.); Wang W (Wang W.) 收藏  |  浏览/下载：26/0  |  提交时间：2010/04/11 buried heterostructure  regrowth  multiple quantum well  distributed feed back  laser  HIGH-TEMPERATURE  OPERATION  10-GB/S