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Sub-400 degrees C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS 期刊论文
ieee transactions on electron devices, 2013, 卷号: 60, 期号: 5, 页码: 1640-1648
Gong, Xiao; Han, Genquan; Liu, Bin; Wang, Lanxiang; Wang, Wei; Yang, Yue; Kong, Eugene Yu-Jin; Su, Shaojian; Xue, Chunlai); Cheng, Buwen; Yeo, Yee-Chia
收藏  |  浏览/下载:20/0  |  提交时间:2013/08/27
Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs 期刊论文
electrochemical and solid-state letters, 2012, 卷号: 15, 期号: 6, 页码: h179-h181
Wang, Lanxiang; Han, Genquan; Su, Shaojian; Zhou, Qian; Yang, Yue; Guo, Pengfei; Wang, Wei; Tong, Yi; Lim, Phyllis Shi Ya; Liu, Bin; Kong, Eugene Yu-Jing; Xue, Chunlai; Wang, Qiming; Cheng, Buwen; Yeo, Yee-Chia
收藏  |  浏览/下载:15/0  |  提交时间:2013/05/07


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