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科研机构
半导体研究所 [8]
内容类型
期刊论文 [8]
发表日期
2013 [3]
2012 [4]
2011 [1]
学科主题
光电子学 [8]
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Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
期刊论文
solid-state electronics, 2013, 卷号: 83, 页码: 66-70
Wang, Lanxiang
;
Su, Shaojian
;
Wang, Wei
;
Gong, Xiao
;
Yang, Yue
;
Guo, Pengfei
;
Zhang, Guangze
;
Xue, Chunlai
;
Cheng, Buwen
;
Han, Genquan
;
Yeo, Yee-Chia
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2013/08/27
Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
期刊论文
Solid-State Electronics, 2013, 卷号: 83, 页码: 66–70
Lanxiang Wang, Shaojian Su, Wei Wang, Xiao Gong, Yue Yang, Pengfei Guo, Guangze Zhang, Chunlai Xue, Buwen Cheng, Genquan Han, Yee-Chia Yeo
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2014/04/04
Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation
期刊论文
ieee electron device letters, 2013, 卷号: 34, 期号: 3, 页码: 339-341
Gong, Xiao
;
Han, Genquan
;
Bai, Fan
;
Su, Shaojian
;
Guo, Pengfei
;
Yang, Yue
;
Cheng, Ran
;
Zhang, Dongliang
;
Zhang, Guangze
;
Xue, Chunlai
;
Cheng, Buwen
;
Pan, Jisheng
;
Zhang, Zheng
;
Tok, Eng Soon
;
Antoniadis, Dimitri
;
Yeo, Yee-Chia
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2013/09/17
Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer
期刊论文
digest of technical papers - symposium on vlsi technology, 2012, 页码: 97-98
Han, Genquan
;
Su, Shaojian
;
Wang, Lanxiang
;
Zhang, Zheng
;
Xue, Chunlai
;
Cheng, Buwen
;
Yeo, Yee-Chia
;
Wang, Wei
;
Gong, Xiao
;
Yang, Yue
;
Ivana
;
Guo, Pengfei
;
Guo, Cheng
;
Zhang, Guangze
;
Pan, Jisheng
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2013/05/07
Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
期刊论文
international symposium on vlsi technology, systems, and applications, proceedings, 2012, 页码: 6210151
Wang, Lanxiang
;
Han, Genquan
;
Su, Shaojian
;
Cheng, Buwen
;
Yeo, Yee-Chia
;
Zhou, Qian
;
Yang, Yue
;
Guo, Pengfei
;
Wang, Wei
;
Tong, Yi
;
Lim, Phyllis Shi Ya
;
Xue, Chunlai
;
Wang, Qiming
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2013/05/07
Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal
期刊论文
ieee electron device letters, 2012, 卷号: 33, 期号: 11, 页码: 1529-1531
Wang LX (Wang, Lanxiang)
;
Su SJ (Su, Shaojian)
;
Wang W (Wang, Wei)
;
Yang Y (Yang, Yue)
;
Tong Y (Tong, Yi)
;
Liu B (Liu, Bin)
;
Guo PF (Guo, Pengfei)
;
Gong X (Gong, Xiao)
;
Zhang GZ (Zhang, Guangze)
;
Xue CL (Xue, Chunlai)
;
Cheng BW (Cheng, Buwen)
;
Han GQ (Han, Genquan)
;
Yeo YC (Yeo, Yee-Chia)
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2013/03/27
Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs
期刊论文
electrochemical and solid-state letters, 2012, 卷号: 15, 期号: 6, 页码: h179-h181
Wang, Lanxiang
;
Han, Genquan
;
Su, Shaojian
;
Zhou, Qian
;
Yang, Yue
;
Guo, Pengfei
;
Wang, Wei
;
Tong, Yi
;
Lim, Phyllis Shi Ya
;
Liu, Bin
;
Kong, Eugene Yu-Jing
;
Xue, Chunlai
;
Wang, Qiming
;
Cheng, Buwen
;
Yeo, Yee-Chia
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2013/05/07
High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules
期刊论文
technical digest- international electron devices meeting, iedm, 2011, 页码: 16.7.1-16.7.3
Han, Genquan
;
Su, Shaojian
;
Zhan, Chunlei
;
Zhou, Qian
;
Yang, Yue
;
Wang, Lanxiang
;
Guo, Pengfei
;
Wei, Wang
;
Wong, Choun Pei
;
Shen, Ze Xiang
;
Cheng, Buwen
;
Yeo, Yee-Chia
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2012/06/13
Electron devices
Germanium
Tin
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