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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：光电子学    内容类型：期刊论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High Coupling Efficiency of the Fiber-Coupled Module Based on Photonic-Band-Crystal Laser Diodes 期刊论文 CHIN. PHYS. LETT., 2017, 卷号: 34, 期号: 7, 页码: 074205 作者:  Yang Chen;  Yu-Fei Wang;  Hong-Wei Qu;  Yu-Fang Zhang;  Yun Liu 收藏  |  浏览/下载：37/0  |  提交时间：2018/07/02 Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells 期刊论文 IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 卷号: 7, 期号: 4, 页码: 1017-1023 作者:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Dongping Shi 收藏  |  浏览/下载：28/0  |  提交时间：2018/07/11 Suppression of optical field leakage to GaN substrate in GaN-based green laser diode 期刊论文 Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 484-489 作者:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu 收藏  |  浏览/下载：34/0  |  提交时间：2018/07/11 New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode 期刊论文 Optics and Laser Technology, 2017, 卷号: 97, 页码: 284–289 作者:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu 收藏  |  浏览/下载：17/0  |  提交时间：2018/07/11 Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer 期刊论文 Journal of Crystal Growth, 2017, 卷号: 467, 页码: 1-5 作者:  Feng Liang;  Degang Zhao;  Desheng Jiang;  Zongshun Liu;  Jianjun Zhu 收藏  |  浏览/下载：32/0  |  提交时间：2018/07/11 A Novel Optical Frequency Hopping Scheme For Secure WDM Optical Communications 期刊论文 ieee photonics journal, 2015, 卷号: 7, 期号: 3, 页码: 7201108 Sun Long Wang, Wei Chen, Ning Hua Zhu, Jian Guo Liu, Wen Ting Wang, Jin Jin Guo 收藏  |  浏览/下载：24/0  |  提交时间：2016/04/08 Widely tunable single band pass microwave photonic filter based on Brillouin-assisted optical carrier recovery 期刊论文 optics express, 2014, 卷号: 22, 期号: 24, 页码: 29304-29313 Wang, Wen Ting; Liu, Jian Guo; Sun, Wen Hui; Wang, Wei Yu; Wang, Sun Long; Zhu, Ning Hua 收藏  |  浏览/下载：24/0  |  提交时间：2015/03/19 Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802 Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long) 收藏  |  浏览/下载：78/2  |  提交时间：2010/05/24 Ga vacancies  MOCVD  GaN  Schottky barrier photodetector  REVERSE-BIAS LEAKAGE  MOLECULAR-BEAM EPITAXY  P-N-JUNCTIONS  POSITRON-ANNIHILATION  DIODES  FILMS