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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 学科主题：光电子学    内容类型：期刊论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 XPS study of impurities in Si-doped AlN film 期刊论文 surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：33/0  |  提交时间：2017/03/10 The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文 aip advances, 2016, 卷号: 6, 页码: 035124 P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：26/0  |  提交时间：2017/03/10 Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文 journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 1, 页码: 011206 J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang 收藏  |  浏览/下载：22/0  |  提交时间：2017/03/10 Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文 journal of applied physics, 2015, 卷号: 117, 页码: 055709 J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载：18/0  |  提交时间：2016/03/23 Differential resistance of GaN-based laser diodes with and without polarization effect 期刊论文 applied optics, 2015, 卷号: 54, 期号: 29, 页码: 8706-8711 X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; L. C. LE; W. LIU; X. G. HE; X. J. LI; F. LIANG; L. Q. ZHANG; J. Q. LIU; H. YANG 收藏  |  浏览/下载：20/0  |  提交时间：2016/03/23 The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文 journal of applied physics, 2014, 卷号: 116, 期号: 16, 页码: 163708 Li, X. J.; Zhao, D. G.; Jiang, D. S.; Liu, Z. S.; Chen, P.; Zhu, J. J.; Le, L. C.; Yang, J.; He, X. G.; Zhang, S. M.; Zhang, B. S.; Liu, J. P.; Yang, H. 收藏  |  浏览/下载：21/0  |  提交时间：2015/03/19 Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness 期刊论文 journal of applied physics, 2013, 卷号: 114, 期号: 14, 页码: 143706 Le, L. C.; Zhao, D. G.; Jiang, D. S.; Li, L.; Wu, L. L.; Chen, P.; Liu, Z. S.; Yang, J.; Li, X. J.; He, X. G.; Zhu, J. J.; Wang, H.; Zhang, S. M.; Yang, H. 收藏  |  浏览/下载：12/0  |  提交时间：2014/04/09 Effect of light Si-doping on the near-band-edge emissions in high quality GaN 期刊论文 journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 053104 Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Wu LL (Wu, L. L.); Li L (Li, L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.) 收藏  |  浏览/下载：10/0  |  提交时间：2013/04/02 Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition 期刊论文 journal of alloys and compounds, 2012, 卷号: 540, 页码: 46-48 Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Le LC (Le, L. C.); Wu LL (Wu, L. L.); Li L (Li, L.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Jia QJ (Jia, Q. J.); Yang H (Yang, Hui) 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/27 Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes 期刊论文 applied physics letters, 2012, 卷号: 101, 期号: 25, 页码: 252110 Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.); Li L (Li, L.); Wu LL (Wu, L. L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Li ZC (Li, Z. C.); Fan YM (Fan, Y. M.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.) 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/20