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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2018     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer 期刊论文 NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189 作者:  Meilan Hao ;   Quan Wang ;   Lijuan Jiang ;   Chun Feng ;   Changxi Chen ;   Cuimei Wang ;   Hongling Xiao ;   Fengqi Liu ;   Xiangang Xu ;   Xiaoliang Wang ;   Zhanguo Wang 收藏  |  浏览/下载：35/0  |  提交时间：2019/11/15 Joining of SiC ceramic by using the liquid polyvinylphenylsiloxane 期刊论文 Advances in Applied Ceramics, 2018, 卷号: Vol.117 No.4, 页码: 212-216 作者:  Bofang Zhou;  Keqin Feng;  Hongling Zhou 收藏  |  浏览/下载：3/0  |  提交时间：2019/03/26 Joining  SiC  ceramic  polyvinylphenylsiloxane  ceramic  yield  shear  strength   Simulation and Optimization of Temperature Distribution in Induction Heating Reactor 期刊论文 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7440-7445 作者:  Mei, Shuzhe;  Wang, Quan;  Xu, Jiankai;  Yin, Haibo;  Xiao, Hongling 收藏  |  浏览/下载：15/0  |  提交时间：2019/12/11 Simulation  Temperature Distribution  Induction Heating   X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power 期刊论文 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7451-7454 作者:  Wang, Quan;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Jiang, Lijuan 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11 X-Band  GaN HEMT  Power Amplifier   Theoretical analysis of induction heating in high-temperature epitaxial growth system 期刊论文 AIP ADVANCES, 2018, 卷号: 8, 期号: 8 作者:  Mei, Shuzhe;  Wang, Quan;  Hao, Meilan;  Xu, Jiankai;  Yin, Haibo 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/11 Gate Leakage and Breakdown Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Fe Delta-Doped Buffer 期刊论文 NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2018, 卷号: 10, 期号: 2, 页码: 185-189 作者:  Hao, Meilan;  Wang, Quan;  Jiang, Lijuan;  Feng, Chun;  Chen, Changxi 收藏  |  浏览/下载：11/0  |  提交时间：2019/12/11 HEMT  Fe Doping  Gate Leakage  Breakdown  PF Emission  FN Tunneling   Trapping Effects Induced by Gate OFF-State Stress in AlGaN/GaN High-Electron-Mobility Transistors with Fe-Doped Buffer 期刊论文 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2018, 卷号: 18, 期号: 11, 页码: 7479-7483 作者:  Hao, Meilan;  Wang, Quan;  Jiang, Lijuan;  Feng, Chun;  Chen, Changxi 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/11 AlGaN/GaN HEMT  Pulsed I-V  Trapping  Gate OFF-State Stress  Fe-Doped  Buffer   Generation of Functional Hepatocytes from Human Adipose-Derived MYC+ KLF4(+) GMNN(+) Stem Cells Analyzed by Single-Cell RNA-Seq Profiling 期刊论文 2018, 卷号: 7, 期号: 11, 页码: 792-805 作者:  Li, Hongling;  Zhu, Li;  Chen, Huimin;  Li, Tangping;  Han, Qin 收藏  |  浏览/下载：14/0  |  提交时间：2020/01/03 Adult stem cell  Hepatocyte  Lineage conversion  Multipotency  Single-cell RNA-seq