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浏览/检索结果: 共93条，第1-10条 帮助 限定条件 发表日期：2018    专题：上海大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Evaluation of precipitation hardening in TiC-reinforced Ti2AlNb-based alloys 期刊论文 INTERNATIONAL JOURNAL OF MINERALS METALLURGY AND MATERIALS, 2018, 卷号: 25, 页码: 453-458 作者:  Zhang, Ya-ran[1];  Cai, Qi[2];  Liu, Yong-chang[3];  Ma, Zong-qing[4];  Li, Chong[5] 收藏  |  浏览/下载：15/0  |  提交时间：2019/04/24 Ti2AlNb alloy  carbides  microstructure  precipitation hardening  hardness   Direct growth of vanadium nitride nanosheets on carbon nanotube fibers as novel negative electrodes for high-energy-density wearable fiber-shaped asymmetric supercapacitors 期刊论文 JOURNAL OF POWER SOURCES, 2018, 卷号: 382, 页码: 122-127 作者:  Guo, Jiabin[1];  Zhang, Qichong[2];  Sun, Juan[3];  Li, Chaowei[4];  Zhao, Jingxin[5] 收藏  |  浏览/下载：22/0  |  提交时间：2019/04/24 Vanadium nitride  Nanosheets  Fiber  Asymmetric supercapacitors  Wearable electronics   The effect of site occupation and valence state of Bi on the luminescence properties of Bi-activated oxysulfide MZnOS (M = Ca, Ba) with layer structure 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: 742, 页码: 1037-1045 作者:  Pan, Dong-Jie[1];  Yang, Yun-Ling[2];  Yang, Xue-Chun[3];  Xu, Tao[4];  Cui, Yuan-Yuan[5] 收藏  |  浏览/下载：17/0  |  提交时间：2019/04/24 Luminescence  MZnOS (M = Ca  Ba)  Bi-activated  Oxysulfide   Increasing the thermoelectric power factor via Ag substitution at Zn site in Ba(Zn1-xAgx)(2)Sb-2 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: 745, 页码: 228-233 作者:  Yan, Ruijuan[1];  Lin, Jianwei[2];  You, Li[3];  Guo, Kai[4];  Yang, Xinxin[5] 收藏  |  浏览/下载：26/0  |  提交时间：2019/04/24 BaZn2Sb2  Zintl phase  Carrier concentration  Thermoelectric materials   Enhanced Electrical Performance and Negative Bias Illumination Stability of Solution-Processed InZnO Thin-Film Transistor by Boron Addition 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 520-525 作者:  Zhong, De-Yao[1];  Li, Jun[2];  Zhao, Cheng-Yu[3];  Huang, Chuan-Xin[4];  Zhang, Jian-Hua[5] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 B doping concentration  boron-doped indium-zinc-oxide (BIZO) thin-film transistors (TFTs)  negative bias illumination stress (NBIS) stability  solution process   Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors With High-k ZrO2 Gate Insulator 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 526-532 作者:  Zhao, Cheng-Yu[1];  Li, Jun[2];  Zhong, De-Yao[3];  Huang, Chuan-Xin[4];  Zhang, Jian-Hua[5] 收藏  |  浏览/下载：16/0  |  提交时间：2019/04/24 ZrO2 gate insulator  lanthanum(La) indium oxide (LaInO) thin-film transistors (TFTs)  solution process  stability   Floating-gate controlled programmable non-volatile black phosphorus PNP junction memory 期刊论文 NANOSCALE, 2018, 卷号: 10, 页码: 3148-3152 作者:  Zhang, Pengfei[1];  Li, Dong[2];  Chen, Mingyuan[3];  Zong, Qijun[4];  Shen, Jun[5] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/24 A Flexure-Guided Piezo Drill for Penetrating the Zona Pellucida of Mammalian Oocytes 期刊论文 IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 2018, 卷号: 65, 页码: 678-686 作者:  Johnson, Wesley[1];  Dai, Changsheng[2];  Liu, Jun[3];  Wang, Xian[4];  Luu, Devin K.[5] 收藏  |  浏览/下载：19/0  |  提交时间：2019/04/24 Cell manipulation  piezo drill  zona pellucida penetration   High Performance ZnSnO Thin Film Transistor with ZrO2 Gate Insulator Formed by Atomic Layer Deposition 期刊论文 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2018, 卷号: 13, 页码: 214-220 作者:  Li, Jun[1];  Huang, Chuan-Xin[2];  Zhao, Cheng-Yu[3];  Ding, Xingwei[4];  Zhang, Jian-Hua[5] 收藏  |  浏览/下载：9/0  |  提交时间：2019/04/24 ZTO TFTs  ALD ZrO2  Stability  Density of States   Simultaneous plate forming and hydriding of La(Fe, Si)(13) magnetocaloric powders 期刊论文 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2018, 卷号: 451, 页码: 47-50 作者:  Yang, Nannan[1];  You, Caiyin[2];  Tian, Na[3];  Zhang, Yue[4];  Leng, Haiyan[5] 收藏  |  浏览/下载：13/0  |  提交时间：2019/04/24 Magnetocaloric effect  Solid hydriding  Curie temperature  Compressive strength