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浏览/检索结果: 共153条，第1-10条 帮助 限定条件 发表日期：2018    内容类型：期刊论文    专题：上海大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Analysis on composition and inclusions of ballpoint pen tip steel 期刊论文 INTERNATIONAL JOURNAL OF MINERALS METALLURGY AND MATERIALS, 2018, 卷号: 25, 页码: 420-428 作者:  Yang, Qian-kun[1];  Shen, Ping[2];  Zhang, Dong[3];  Wu, Yan-xin[4];  Fu, Jian-xun[5] 收藏  |  浏览/下载：12/0  |  提交时间：2019/04/24 ballpoint pen tip  free-cutting stainless steel  inclusions  lead  tellurium   High Modulus Reinforcement Alloys 期刊论文 IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2018, 卷号: 28 作者:  Han, Ke[1];  Toplosky, Vince[2];  Min, Na[3];  Lu, Jun[4];  Xin, Yan[5] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 High strength materials  reinforcement  failure mode  plastic deformation   The effect of site occupation and valence state of Bi on the luminescence properties of Bi-activated oxysulfide MZnOS (M = Ca, Ba) with layer structure 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: 742, 页码: 1037-1045 作者:  Pan, Dong-Jie[1];  Yang, Yun-Ling[2];  Yang, Xue-Chun[3];  Xu, Tao[4];  Cui, Yuan-Yuan[5] 收藏  |  浏览/下载：17/0  |  提交时间：2019/04/24 Luminescence  MZnOS (M = Ca  Ba)  Bi-activated  Oxysulfide   Use of chitosan to reinforce transparent conductive cellulose nanopaper 期刊论文 JOURNAL OF MATERIALS CHEMISTRY C, 2018, 卷号: 6, 页码: 242-248 作者:  Zhang, Huaiyu[1];  Shi, Liyi[2];  Feng, Xin[3] 收藏  |  浏览/下载：9/0  |  提交时间：2019/04/24 Enhanced Electrical Performance and Negative Bias Illumination Stability of Solution-Processed InZnO Thin-Film Transistor by Boron Addition 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 520-525 作者:  Zhong, De-Yao[1];  Li, Jun[2];  Zhao, Cheng-Yu[3];  Huang, Chuan-Xin[4];  Zhang, Jian-Hua[5] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 B doping concentration  boron-doped indium-zinc-oxide (BIZO) thin-film transistors (TFTs)  negative bias illumination stress (NBIS) stability  solution process   Effect of La Addition on the Electrical Characteristics and Stability of Solution-Processed LaInO Thin-Film Transistors With High-k ZrO2 Gate Insulator 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 页码: 526-532 作者:  Zhao, Cheng-Yu[1];  Li, Jun[2];  Zhong, De-Yao[3];  Huang, Chuan-Xin[4];  Zhang, Jian-Hua[5] 收藏  |  浏览/下载：16/0  |  提交时间：2019/04/24 ZrO2 gate insulator  lanthanum(La) indium oxide (LaInO) thin-film transistors (TFTs)  solution process  stability   Transmission/reflection behaviors of surface plasmons at an interface between two plasmonic systems 期刊论文 JOURNAL OF PHYSICS-CONDENSED MATTER, 2018, 卷号: 30 作者:  Guan, Fuxin[1];  Sun, Shulin[2];  Ma, Shaojie[3];  Fang, Zhening[4];  Zhu, Baocheng[5] 收藏  |  浏览/下载：10/0  |  提交时间：2019/04/24 surface plasmon polariton  mode expansion method  scattering  plasmonic waveguide  dielectric/metal interface  dispersion relation   3D Local Manipulation of the Metal-Insulator Transition Behavior in VO2 Thin Film by Defect-Induced Lattice Engineering 期刊论文 ADVANCED MATERIALS INTERFACES, 2018, 卷号: 5 作者:  Jia, Qi[1];  Grenzer, Joerg[2];  He, Huabing[3];  Anwand, Wolfgang[4];  Ji, Yanda[5] 收藏  |  浏览/下载：23/0  |  提交时间：2019/04/24 lattice engineering  metal-insulator transition  open volume defect  vanadium dioxide   Opinion formation on multiplex scale-free networks 期刊论文 EPL, 2018, 卷号: 121 作者:  Vu Xuan Nguyen[1];  Xiao, Gaoxi[2];  Xu, Xin-Jian[3];  Li, Guoqi[4];  Wang, Zhen[5] 收藏  |  浏览/下载：11/0  |  提交时间：2019/04/24 High Performance ZnSnO Thin Film Transistor with ZrO2 Gate Insulator Formed by Atomic Layer Deposition 期刊论文 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2018, 卷号: 13, 页码: 214-220 作者:  Li, Jun[1];  Huang, Chuan-Xin[2];  Zhao, Cheng-Yu[3];  Ding, Xingwei[4];  Zhang, Jian-Hua[5] 收藏  |  浏览/下载：9/0  |  提交时间：2019/04/24 ZTO TFTs  ALD ZrO2  Stability  Density of States