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All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process 期刊论文
2017, 卷号: 5, 期号: [db:dc_citation_issue], 页码: 7043
作者:  Zheng, Zeke[1];  Zeng, Yong[1];  Yao, Rihui[1];  Fang, Zhiqiang[1];  Zhang, Hongke[1]
收藏  |  浏览/下载:10/0  |  提交时间:2019/12/03
All-sputtered, flexible, bottom-gate IGZO/Al2O3bi-layer thin film transistors on PEN fabricated by a fully room temperature process 期刊论文
2017, 卷号: 5, 期号: 28, 页码: 7043
作者:  Zheng, Zeke[1];  Zeng, Yong[1];  Yao, Rihui[1];  Fang, Zhiqiang[1];  Zhang, Hongke[1]
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/17


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