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| Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO 期刊论文 Chinese Physics B, 2017, 卷号: 26, 期号: 10, 页码: 107101 作者: Zhan-Wei Shen; Feng Zhang; Sima Dimitrijev; Ji-Sheng Han; Guo-Guo Yan
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:38/0  |  提交时间:2018/06/15 |
| 1.3-μm dual-wavelength DFB laser chip with modulation bandwidth enhancement by integrated passive optical feedback 期刊论文 OPTICS EXPRESS, 2017, 卷号: 24, 期号: 25, 页码: 28869-28876 作者: FEI GUO; DAN LU; LU GUO; SONGTAO LIU; WU ZHAO
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:28/0  |  提交时间:2018/05/30 |
| Anisotropically biaxial strain in non-polar (112-0) plane InxGa1-xN/GaN layers investigated by X-ray reciprocal space mapping 期刊论文 SCIENTIFIC REPORTS, 2017, 卷号: 7, 页码: 4497 作者: Guijuan Zhao; Huijie Li
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:31/0  |  提交时间:2018/05/23 |
| Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates 期刊论文 Journal of Crystal Growth, 2017, 卷号: 460, 页码: 1-4 作者: Xiaoye Wang; Wenyuan Yang; Baojun Wang; Xianghai Ji; Shengyong Xu
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:24/0  |  提交时间:2018/05/30 |
| Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition 期刊论文 Chinese Physics B, 2017, 卷号: 26, 期号: 7, 页码: 078102 作者: Zesheng Ji; Lianshan Wang; Guijuan Zhao; Yulin Meng; Fangzheng Li
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:19/0  |  提交时间:2018/05/23 |
| Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire 期刊论文 ACS Applied Materials & Interfaces, 2017, 卷号: 9, 页码: 2867−2874 作者: Yuxiang Han; Mengqi Fu; Zhiqiang Tang; Xiao Zheng; Xianghai Ji
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:26/0  |  提交时间:2018/05/23 |