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| Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe2 期刊论文 physical review b, 2016, 卷号: 93, 期号: 11, 页码: 115409 Q. J. Song; Q. H. Tan; X. Zhang; J. B. Wu; B. W. Sheng; Y. Wan; X. Q. Wang; L. Dai; P. H. Tan 收藏  |  浏览/下载:14/0  |  提交时间:2017/03/16 |
| Unveiling the Mechanism for the Split Hysteresis Loop in Epitaxial Co2Fe1-xMnxAl Full-Heusler Alloy Films 期刊论文 scientific reports, 2016, 卷号: 6, 页码: 18615 X. D. Tao; H. L. Wang; B. F. Miao; L. Sun; B. You; D. Wu; W. Zhang; H. P. Oepen; J. H. Zhao; H. F. Ding 收藏  |  浏览/下载:18/0  |  提交时间:2017/03/16 |
| XPS study of impurities in Si-doped AlN film 期刊论文 surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载:29/0  |  提交时间:2017/03/10 |
| The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文 aip advances, 2016, 卷号: 6, 页码: 035124 P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10 |
| Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文 applied physics a, 2016, 卷号: 122, 期号: 9 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载:14/0  |  提交时间:2017/03/10 |
| The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content 期刊论文 physica status solidi (a), 2016, 卷号: 213, 期号: 8, 页码: 2223–2228 X. Li; D. G. Zhao*; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; F. Liang; L. Q. Zhang; J. P. Liu; H. Yang 收藏  |  浏览/下载:13/0  |  提交时间:2017/03/10 |
| Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文 journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 1, 页码: 011206 J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang 收藏  |  浏览/下载:20/0  |  提交时间:2017/03/10 |
| GaN high electron mobility transistors with AlInN back barriers 期刊论文 journal of alloys and compounds, 2016, 卷号: 662, 页码: 16-19 X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang 收藏  |  浏览/下载:13/0  |  提交时间:2017/03/10 |
| Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文 superlattices and microstructures, 2016, 卷号: 97, 页码: 186-192 X. Li; D.G. Zhao; J. Yang; D.S. Jiang; Z.S. Liu; P. Chen; J.J. Zhu; W. Liu; X.G. He; X.J. Li; F. Liang; L.Q. Zhang; J.P. Liu; H. Yang; Y.T. Zhang; G.T. Du 收藏  |  浏览/下载:27/0  |  提交时间:2017/03/10 |
| Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文 chemical physics letters, 2016, 卷号: 651, 页码: 76-79 F. Liang; P. Chen; D.G. Zhao; D.S. Jiang; Z.S. Liu; J.J. Zhu; J. Yang; W. Liu; X.G. He; X.J. Li; X. Li; S.T. Liu; H. Yang; L.Q. Zhang; J.P. Liu; Y.T. Zhang; G.T. Du 收藏  |  浏览/下载:21/0  |  提交时间:2017/03/10 |