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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2016    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Covalently bonded single-molecule junctions with stable and reversible photoswitched conductivity 期刊论文 SCIENCE, 2016 Jia, Chuancheng; Migliore, Agostino; Xin, Na; Huang, Shaoyun; Wang, Jinying; Yang, Qi; Wang, Shuopei; Chen, Hongliang; Wang, Duoming; Feng, Boyong; Liu, Zhirong; Zhang, Guangyu; Qu, Da-Hui; Tian, He; Ratner, Mark A.; Xu, H. Q.; Nitzan, Abraham; Guo, Xuefeng 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 ELECTRONIC DEVICES  SWITCHES  HYSTERESIS  CELLS   Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process 期刊论文 NANOSCALE RESEARCH LETTERS, 2016 Li, Kan; Pan, Wei; Wang, Jingyun; Pan, Huayong; Huang, Shaoyun; Xing, Yingjie; Xu, H. Q. 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 VLS mechanism  Chemical vapor deposition  Naturally cooling growth  BIAS CONDUCTANCE PEAK  SILICON NANOWIRES  VAPOR-DEPOSITION  HYBRID DEVICE  MIGRATION   Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts 期刊论文 JOURNAL OF APPLIED PHYSICS, 2016 Feng, Boyong; Huang, Shaoyun; Wang, Jiyin; Pan, Dong; Zhao, Jianghua; Xu, H. Q. 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 FIELD-EFFECT TRANSISTORS  DIAMETER   Measurements of the spin-orbit interaction and Lande g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime 期刊论文 APPLIED PHYSICS LETTERS, 2016 Wang, Jiyin; Huang, Shaoyun; Lei, Zijin; Pan, Dong; Zhao, Jianhua; Xu, H. Q. 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/04 GIANT