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| Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes 期刊论文 superlattices and microstructures, 2016, 卷号: 96, 页码: 220-225 Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaoguang He; Xiaojing Li; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du 收藏  |  浏览/下载:29/0  |  提交时间:2017/03/10 |
| XPS study of impurities in Si-doped AlN film 期刊论文 surface and interface analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载:29/0  |  提交时间:2017/03/10 |
| The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文 aip advances, 2016, 卷号: 6, 页码: 035124 P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10 |
| Different variation behaviors of resistivity for high-temperature-grown and low-temperature-grown p-GaN films 期刊论文 chinese physics b, 2016, 卷号: 25, 期号: 2, 页码: 027102 Jing Yang; De-Gang Zhao; De-Sheng Jiang; Ping Chen; Zong-Shun Liu; Jian-Jun Zhu; Ling-Cong Le; Xiao-Jing Li; Xiao-Guang He; Li-Qun Zhang; Hui Yang 收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10 |
| Comparative study of the differential resistance of GaAs- and GaN-based laser diodes 期刊论文 journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 4, 页码: 041211 Xiang Li; Zongshun Liu; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Jing Yang; Lingcong Le; Wei Liu; Xiaoguang He; Xiaojing Li; Feng Liang 收藏  |  浏览/下载:18/0  |  提交时间:2017/03/10 |
| Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文 applied physics a, 2016, 卷号: 122, 期号: 9 F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du 收藏  |  浏览/下载:14/0  |  提交时间:2017/03/10 |
| The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content 期刊论文 physica status solidi (a), 2016, 卷号: 213, 期号: 8, 页码: 2223–2228 X. Li; D. G. Zhao*; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; F. Liang; L. Q. Zhang; J. P. Liu; H. Yang 收藏  |  浏览/下载:13/0  |  提交时间:2017/03/10 |
| Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity 期刊论文 ieee journal of photovoltaics, 2016, 卷号: 6, 期号: 2, 页码: 454-459 Jing Yang; De-Gang Zhao; De-Sheng Jiang; Ping Chen; Jian-Jun Zhu; Zong-Shun Liu; Ling-Cong Le; Xiao-Guang He; Xiao-Jing Li; Li-Qun Zhang; Jian-Ping Liu; Hui Yang 收藏  |  浏览/下载:21/0  |  提交时间:2017/03/10 |
| Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文 journal of vacuum science & technology b, 2016, 卷号: 34, 期号: 1, 页码: 011206 J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang 收藏  |  浏览/下载:20/0  |  提交时间:2017/03/10 |
| GaN high electron mobility transistors with AlInN back barriers 期刊论文 journal of alloys and compounds, 2016, 卷号: 662, 页码: 16-19 X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang 收藏  |  浏览/下载:13/0  |  提交时间:2017/03/10 |