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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2015     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Enhancing the photocatalytic activity of GaN by electrochemical etching 期刊论文 MATERIALS RESEARCH BULLETIN, 2015, 卷号: 70, 页码: 881-886 作者:  Cao, Dezhong;  Xiao, Hongdi;  Xu, Hangzhou;  Cui, Jishi;  Gao, Qingxue 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Nanoporous GaN  Photocatalytic activity  Porous Si  Electrochemical  etching   Characterization of Sn-doped beta-Ga2O3 films deposited on MgO (100) substrate by MOCVD 期刊论文 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 卷号: 26, 期号: 10, 页码: 7889-7894 作者:  Mi, Wei;  Ma, Jin;  Li, Zhao;  Luan, Caina;  Xiao, Hongdi 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/17 Photodegradation activity and stability of porous silicon wafers with (100) and (111) oriented crystal planes 期刊论文 MICROPOROUS AND MESOPOROUS MATERIALS, 2015, 卷号: 204, 期号: C, 页码: 251-256 作者:  Xu, Hangzhou;  Xiao, Hongdi;  Pei, Haiyan;  Cui, Jishi;  Hu, Wenrong 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/17 Photo-electrochemical process  Porous silicon  Anisotropic etching  Photodegradation   Preparation and characterization of Sn-doped beta-Ga2O3 homoepitaxial films by MOCVD 期刊论文 JOURNAL OF MATERIALS SCIENCE, 2015, 卷号: 50, 期号: 8, 页码: 3252-3257 作者:  Du, Xuejian;  Li, Zhao;  Luan, Caina;  Wang, Weiguang;  Wang, Mingxian 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/17 Degradation mechanism of hydrogen-terminated porous silicon in the presence and in the absence of light 期刊论文 AIP ADVANCES, 2015, 卷号: 5, 期号: 6 作者:  Xu, Hangzhou;  Pei, Haiyan;  Xiao, Hongdi;  Hu, Wenrong 收藏  |  浏览/下载：7/0  |  提交时间：2019/12/17 Self-standing nanoporous GaN membranes fabricated by UV-assisted electrochemical anodization 期刊论文 MATERIALS LETTERS, 2015, 卷号: 145, 页码: 304-307 作者:  Xiao, Hongdi;  Cui, Jishi;  Cao, Dehong;  Gao, Qingxue;  Liu, Jianqiang 收藏  |  浏览/下载：12/0  |  提交时间：2019/12/17 Porous materials  Semiconductors  Structural  Corrosion   Transparent conducting tin-doped Ga2O3 films deposited on MgAl2O4 (100) substrates by MOCVD 期刊论文 CERAMICS INTERNATIONAL, 2015, 卷号: 41, 期号: 2, 页码: 2572-2575 作者:  Mi, Wei;  Li, Zhao;  Luan, Caina;  Xiao, Hongdi;  Zhao, Cansong 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/17 Films  Oxides  MOCVD  Resistivity   Porosity-induced relaxation of strains at different depth of nanoporous GaN studied using the Z-scan of Raman spectroscopy 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 626, 页码: 154-157 作者:  Cui, Jishi;  Xiao, Hongdi;  Cao, Dezhong;  Ji, Ziwu;  Ma, Jin 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Nanoporous GaN  Porosity  Raman spectroscopy  Strain relaxation   Electrochemical characteristics of n-type GaN in oxalic acid solution under the pre-breakdown condition 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 652, 页码: 200-204 作者:  Cao, Dezhong;  Xiao, Hongdi;  Mao, Hongzhi;  Ma, Houyi;  Gao, Qingxue 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/17 Electrochemical impedance  Etching conditions  Oxide formation  Oxide  dissolution   Enhancing the photocatalytic activity of GaN by electrochemical etching 期刊论文 Materials Research Bulletin: An International Journal Reporting Research on Crystal Growth and Materials Preparation and Characterization, 2015, 页码: 881-886 作者:  Cao, Dezhong;  Xiao, Hongdi;  Xu, Hangzhou;  Cui, Jishi;  Gao, Qingxue 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Nanoporous GaN  Photocatalytic activity  Porous Si  Electrochemical etching